Alessandro Calderoni

Author

Micron (United States)

Also Known As

A Calderoni, A. Calderoni, A. V. Calderoni, Alessandro Calderoni, Calderoni, Alessandro

Publications

2.4K

Citations

H-Index

Concepts

All Affiliations

Micron (United States)Politecnico di Milano Dexerials (Japan)Istituto di Fotonica e Nanotecnologie Micron (Italy)

About

Alessandro Calderoni is an author at Micron (United States) specializing in engineering, electrical engineering, and computer engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	24	34	1.8K
2	Applied Physics	16	21	765
3	Social Sciences	5	5	433
4	Cognitive Science	2	2	318
5	Medicine	1	1	40

Alessandro Calderoni

Publications

2.3K

Citations

H-Index

Page 1

	Year	Citations
Learning of spatiotemporal patterns in a spiking neural network with resistive switching synapses Wei Wang, Giacomo Pedretti, Valerio Milo, Science Advances	2018	263
Neuromorphic Learning and Recognition With One-Transistor-One-Resistor Synapses and Bistable Metal Oxide RRAM Stefano Ambrogio, Simone Balatti, Valerio Milo, IEEE Transactions on Electron Devices One-transistor-one-resistor SynapsesEngineeringPhase Change MemoryNeurochipSocial Sciences	2016	247
Statistical Fluctuations in HfO<sub><italic><bold>x</bold></italic></sub> Resistive-Switching Memory: Part I - Set/Reset Variability Stefano Ambrogio, Simone Balatti, Antonio Cubeta, IEEE Transactions on Electron Devices Reset StateElectrical EngineeringNon-volatile MemoryEngineeringSet/reset Variability	2014	218
Memristive neural network for on-line learning and tracking with brain-inspired spike timing dependent plasticity Giacomo Pedretti, Valerio Milo, Stefano Ambrogio, Scientific Reports	2017	165
Statistical Fluctuations in HfO<sub><i>x</i></sub> Resistive-Switching Memory: Part II—Random Telegraph Noise Stefano Ambrogio, Simone Balatti, Antonio Cubeta, IEEE Transactions on Electron Devices Bias DependenceNon-volatile MemoryElectrical EngineeringEngineeringPhysics	2014	126
Physical Unbiased Generation of Random Numbers With Coupled Resistive Switching Devices Simone Balatti, Stefano Ambrogio, Roberto Carboni, IEEE Transactions on Electron Devices Non-volatile MemoryEngineeringGeneration ProbabilitiesPseudo-random SequenceComputer Architecture	2016	124
Voltage-Controlled Cycling Endurance of HfO<sub><italic>x</italic></sub>-Based Resistive-Switching Memory Simone Balatti, Stefano Ambrogio, Zhongqiang Wang, IEEE Transactions on Electron Devices Non-volatile MemoryEngineeringEmerging Memory TechnologyComputer ArchitecturePhase Change Memory	2015	103
NVDRAM: A 32Gb Dual Layer 3D Stacked Non-volatile Ferroelectric Memory with Near-DRAM Performance for Demanding AI Workloads Nirmal Ramaswamy, Alessandro Calderoni, J. Zahurak,	2023	91
Demonstration of hybrid CMOS/RRAM neural networks with spike time/rate-dependent plasticity Valerio Milo, Giacomo Pedretti, Roberto Carboni, Spike Time/rate-dependent PlasticityElectrical EngineeringSynaptic PlasticityCognitive ScienceEngineering	2016	71
Understanding switching variability and random telegraph noise in resistive RAM Stefano Ambrogio, Simone Balatti, Antonio Cubeta, Non-volatile MemoryElectrical EngineeringResistive RamEngineeringPhysics	2013	67

Page 1