IEEE Electron Device Letters · 2010 · 139 citations · 10 references
EngineeringEmerging Memory TechnologyPhase-change MemoriesPhase Change MemoryElectronic DevicesStorage SystemsElectrical BehaviorMemory DeviceMemory DevicesGst PcmsElectronic PackagingPhase-change MemoryPower Electronic DevicesElectrical EngineeringElectronic MemoryComputer EngineeringEnergy StoragePhase-change MaterialMicroelectronicsElectrophysiology
In this letter, we present a study on the electrical behavior of phase-change memories (PCMs) based on a GeTe active material. GeTe PCMs show, first, extremely rapid SET operation (yielding a gain of more than one decade in energy per bit with respect to standard GST PCMs), second, robust cycling, up to 1 × 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">5</sup> , with 30-ns SET and RESET stress time, and third, a better retention behavior at high temperature with respect to GST PCMs. These results, obtained on single cells, suggest GeTe as a promising alternative material to standard GST to improve PCM performance and reliability.
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Nanosecond switching in GeTe phase change memory cells
Gunnar Bruns, P. Merkelbach, Carl Schlockermann et al. · Applied Physics Letters · 2009 · 450 citations
Reset State, Electrical Engineering, Non-volatile Memory +12
Reliability characterization of Phase Change Memory
B. Gleixner, F. Pellizzer, R. Bez · 2009 · 66 citations