C. Jahan

Statistical Analysis of the Charge Collected in SOI and Bulk Devices Under Heavy lon and Proton Irradiation—Implications for Digital SETs

V. Ferlet-Cavrois, Philippe Paillet, Marc Gaillardin et al. · IEEE Transactions on Nuclear Science · 2006 · 151 citations

Engineering, Nuclear Physics, Vlsi Design +22

Electrical Behavior of Phase-Change Memory Cells Based on GeTe

L. Perniola, Véronique Sousa, A. Fantini et al. · IEEE Electron Device Letters · 2010 · 139 citations

Engineering, Emerging Memory Technology, Phase-change Memories +17

Direct measurement of transient pulses induced by laser and heavy ion irradiation in deca-nanometer devices

V. Ferlet-Cavrois, Philippe Paillet, Dale McMorrow et al. · IEEE Transactions on Nuclear Science · 2005 · 95 citations

Engineering, Laser Science, Laser-plasma Interaction +20

Carbon-doped GeTe: A promising material for Phase-Change Memories

Giovanni Betti Beneventi, L. Perniola, V. Sousa et al. · Solid-State Electronics · 2011 · 90 citations · Full text

Engineering, Electronic Memory, Applied Physics +5

Total ionizing dose effects on deca-nanometer fully depleted SOI devices

P. Paillet, Marc Gaillardin, Véronique Ferlet-Cavrois et al. · IEEE Transactions on Nuclear Science · 2005 · 82 citations

Engineering, Dose Effects, Silicon On Insulator +16