C. Jahan

Statistical Analysis of the Charge Collected in SOI and Bulk Devices Under Heavy lon and Proton Irradiation—Implications for Digital SETs

V. Ferlet-Cavrois, Philippe Paillet, Marc Gaillardin et al. · IEEE Transactions on Nuclear Science · 2006 · 153 citations · Full text

Engineering, Computer Engineering, Electrical Engineering +17

Electrical Behavior of Phase-Change Memory Cells Based on GeTe

L. Perniola, Véronique Sousa, A. Fantini et al. · IEEE Electron Device Letters · 2010 · 139 citations

Engineering, Electrical Engineering, Materials Science +12

Direct measurement of transient pulses induced by laser and heavy ion irradiation in deca-nanometer devices

V. Ferlet-Cavrois, Philippe Paillet, Dale McMorrow et al. · IEEE Transactions on Nuclear Science · 2005 · 95 citations

Engineering, Electrical Engineering, Microelectronics +16

Carbon-doped GeTe: A promising material for Phase-Change Memories

Giovanni Betti Beneventi, L. Perniola, V. Sousa et al. · Solid-State Electronics · 2011 · 91 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +14

Total ionizing dose effects on deca-nanometer fully depleted SOI devices

P. Paillet, Marc Gaillardin, Véronique Ferlet-Cavrois et al. · IEEE Transactions on Nuclear Science · 2005 · 83 citations

Engineering, Electrical Engineering, Microelectronics +16