L. Perniola - Concepedia

Author

L. Perniola

Commissariat à l'Énergie Atomique et aux Énergies Alternatives

Also Known As

L Perniola, L. Perniola, Luca Perniola, Perniola, L., Perniola, Luca

225

Publications

4.7K

Citations

H-Index

139

Concepts

All Affiliations

Commissariat à l'Énergie Atomique et aux Énergies Alternatives CEA Grenoble Laboratoire d'Électronique des Technologies de l'Information Institut polytechnique de Grenoble Université Grenoble Alpes

About

L. Perniola is an author at Commissariat à l'Énergie Atomique et aux Énergies Alternatives specializing in engineering, electrical engineering, and microelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	35	90	3.7K
2	Social Sciences	10	10	229
3	Medicine	5	5	379
4	Natural Sciences	3	3	218
5	Health Sciences	1	1	18

L. Perniola

Publications

4.4K

Citations

H-Index

Page 1

	Year	Citations
Phase change memory as synapse for ultra-dense neuromorphic systems: Application to complex visual pattern extraction Manan Suri, Olivier Bichler, Damien Querlioz,	2011	306
HfO<sub>2</sub>-Based OxRAM Devices as Synapses for Convolutional Neural Networks Daniele Garbin, Elisa Vianello, Olivier Bichler, IEEE Transactions on Electron Devices Convolutional Neural NetworkEngineeringSynaptic TransmissionEmerging Memory TechnologyElectronic Devices	2015	193
Quantum-size effects in hafnium-oxide resistive switching Shibing Long, Xiaojuan Lian, C. Cagli, Applied Physics Letters Materials ScienceEngineeringPhysicsNanotechnologyNanoelectronics	2013	165
Voltage and Power-Controlled Regimes in the Progressive Unipolar RESET Transition of HfO2-Based RRAM Shibing Long, L. Perniola, C. Cagli, Scientific Reports	2013	148
Electrical Behavior of Phase-Change Memory Cells Based on GeTe L. Perniola, Véronique Sousa, A. Fantini, IEEE Electron Device Letters EngineeringEmerging Memory TechnologyPhase-change MemoriesPhase Change MemoryElectronic Devices	2010	139
Physical aspects of low power synapses based on phase change memory devices Manan Suri, Olivier Bichler, Damien Querlioz, Journal of Applied Physics EngineeringSynaptic TransmissionOptogeneticsPhase Change MemoryNeurochip	2012	134
Fundamental variability limits of filament-based RRAM Alessandro Grossi, E. Nowak, Cristian Zambelli, Non-volatile MemoryElectrical EngineeringResistive RamEngineeringFlash Memory	2016	132
A Model for the Set Statistics of RRAM Inspired in the Percolation Model of Oxide Breakdown Shibing Long, Xiaojuan Lian, C. Cagli, IEEE Electron Device Letters Electrical EngineeringEngineeringPhysicsNatural SciencesEmerging Memory Technology	2013	131
Understanding RRAM endurance, retention and window margin trade-off using experimental results and simulations Cécile Nail, G. Molas, P. Blaise, Non-volatile MemoryEngineeringComputer ArchitectureComputer MemoryMemory	2016	125
Cycle-to-Cycle Intrinsic RESET Statistics in ${\rm HfO}_{2}$-Based Unipolar RRAM Devices Shibing Long, Xiaojuan Lian, Tianchun Ye, IEEE Electron Device Letters Electrical EngineeringEngineeringI XmlnsEmerging Memory TechnologyApplied Physics	2013	113

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