Publication | Open Access
Quantum-size effects in hafnium-oxide resistive switching
165
Citations
20
References
2013
Year
Materials ScienceEngineeringPhysicsNanotechnologyNanoelectronicsOxide ElectronicsApplied PhysicsQuantum MaterialsCondensed Matter PhysicsQuantum-size EffectsConducting FilamentCf TransmissionCharge Carrier TransportOxygen Vacancy PathsNanoscale ScienceCharge TransportSemiconductor Device
Discrete changes of conductance of the order of G0 = 2e2/h reported during the unipolar reset transitions of Pt/HfO2/Pt structures are interpreted as the signature of atomic-size variations of the conducting filament (CF) nanostructure. Our results suggest that the reset occurs in two phases: a progressive narrowing of the CF to the limit of a quantum wire (QW) followed by the opening of a spatial gap that exponentially reduces the CF transmission. First principles calculations show that oxygen vacancy paths in HfO2 with single- to few-atom diameters behave as QWs and are capable of carrying current with G0 conductance.
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