2016 · 126 citations · 1 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsMicroelectronicsSemiconductor DevicesMemory DevicesMemory ModelingMemory StorageMemristive MaterialsSemiconductor ReliabilityEndurance CharacteristicsEndurance ModelingFilament MaterialsMemristive MemoryNon-volatile Memory DesignNonvolatile Memory MaterialsResistive Random-access MemoryRetention Characteristics
In this paper we clarify for the first time the correlation between endurance, window margin and retention of Resistive RAM. To this aim, various classes of RRAM (OXRAM and CBRAM) are investigated, showing high window margin up to 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">10</sup> cycles or high 300°C retention. From first principle calculations, we analyze the conducting filament composition for the various RRAM technologies, and extract the key filament features. We then propose an analytical model to calculate the dependence between endurance, window margin and retention, linking material parameters to memory characteristics.
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