Memory Reliability is a metric that quantifies the consistency and accuracy of data storage and retrieval across levels of the memory hierarchy under normal operating conditions and over time.
323
Publications
14.7K
Citations
1K
Authors
286
Institutions
Publications per year
2017–2026
71
Publications
323
Bianca Schroeder, Eduardo Pinheiro, Wolf-Dietrich Weber · 2009 · 556 citations
Bit error rate in NAND Flash memories
Neal Mielke, Todd A. Marquart, Ning Wu et al. · 2008 · 358 citations
Error Patterns in MLC NAND Flash Memory: Measurement, Characterization, and Analysis
Yu Cai, Erich F. Haratsch, Onur Mutlu et al. · 2012 · 321 citations
1–5 of 323
Authors
1K
- OM
15
h-index
- VS
12
h-index
- PR
9
h-index
- JA
8
h-index
- TK
7
h-index
1–5 of 1K
Institutions
286
Carnegie Mellon University
Pittsburgh, United States
16 h-index
51 publications
6.9K citations
Advanced Micro Devices (United States)
Sunnyvale, United States
12 h-index
21 publications
780 citations
Intel (United States)
Santa Clara, United States
11 h-index
33 publications
6.3K citations
ETH Zurich
Zurich, Switzerland
10 h-index
15 publications
887 citations
Samsung (South Korea)
Seoul, South Korea
9 h-index
95 publications
3K citations
Georgia Institute of Technology
Atlanta, United States
9 h-index
17 publications
927 citations
Universidad Nebrija
Madrid, Spain
9 h-index
18 publications
610 citations
Sandia National Laboratories
Albuquerque, United States
8 h-index
15 publications
939 citations
1–8 of 286
Venues
- IEEE Transactions on Computers
12 publications · 325 citations
12
h-index
- IEEE Transactions on Nuclear Science
10 publications · 272 citations
10
h-index
- IEEE Transactions on Electron Devices
6 publications · 1K citations
6
h-index
- IEEE Transactions on Device and Materials Reliability
6 publications · 195 citations
6
h-index
- IEEE Transactions on Reliability
6 publications · 300 citations
6
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1–5