H. Y. Lee

Evidence and solution of over-RESET problem for HfO<inf>X</inf> based resistive memory with sub-ns switching speed and high endurance

H. Y. Lee, Y. S. Chen, P. S. Chen et al. · 2010 · 252 citations

Engineering, Electrical Engineering, Materials Science +11

Highly scalable hafnium oxide memory with improvements of resistive distribution and read disturb immunity

Y. S. Chen, H. Y. Lee, P. S. Chen et al. · 2009 · 201 citations

Engineering, Electrical Engineering, Materials Science +12

Repeatable unipolar/bipolar resistive memory characteristics and switching mechanism using a Cu nanofilament in a GeOx film

S. Z. Rahaman, S. Maikap, Wen‐Shan Chen et al. · Applied Physics Letters · 2012 · 58 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17

Challenges and opportunities for HfO<inf>X</inf> based resistive random access memory

Y. S. Chen, H. Y. Lee, P. S. Chen et al. · 2011 · 43 citations

Engineering, Materials Engineering, Materials Science +14

Physical and electrical characteristics of atomic layer deposited TiN nanocrystal memory capacitors

S. Maikap, P. J. Tzeng, H. Y. Lee et al. · Applied Physics Letters · 2007 · 38 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17