P. J. Tzeng - Concepedia

Concepedia

Author

P. J. Tzeng

Industrial Technology Research Institute

Also Known As

P-J Tzeng, P. J. Tzeng, P.-J. Tzeng, P.J. Tzeng, Pei Jer Tzeng

46

Publications

1.4K

Citations

13

H-Index

50

Concepts

All Affiliations

Industrial Technology Research Institute Chang Gung University National Tsing Hua University National Taiwan University Minghsin University of Science and Technology

PJ

About

P. J. Tzeng is an author at Industrial Technology Research Institute specializing in engineering, microelectronics, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	13	14	1.4K
2	Applied Physics	12	12	1.3K
3	Electrical Engineering	12	12	1.3K
4	Computer Engineering	3	3	72
5	Social Sciences	1	1	70

P. J. Tzeng

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14

Publications

1.4K

Citations

13

H-Index

	Year	Citations
Low power and high speed bipolar switching with a thin reactive Ti buffer layer in robust HfO2 based RRAM Hsuan‐Yu Lee, P. S. Chen, Tong Wu, Non-volatile MemoryEngineeringMemory DesignEmerging Memory TechnologyReactive Buffer Layer	2008	619
Low-Power and Nanosecond Switching in Robust Hafnium Oxide Resistive Memory With a Thin Ti Cap H.Y. Lee, Y.S. Chen, P.S. Chen, IEEE Electron Device Letters Non-volatile MemoryEngineeringPhase Change MemoryNanoelectronicsMemory Device	2009	197
Charge trapping characteristics of atomic-layer-deposited HfO<sub>2</sub> films with Al<sub>2</sub>O<sub>3</sub> as a blocking oxide for high-density non-volatile memory device applications S. Maikap, H. Y. Lee, T-Y Wang, Semiconductor Science and Technology Materials ScienceNon-volatile MemoryElectrical EngineeringEngineeringOxide Electronics	2007	136
Electrical evidence of unstable anodic interface in Ru∕HfOx∕TiN unipolar resistive memory Heng Yuan Lee, Pang Shiu Chen, Tai Yuan Wu, Applied Physics Letters Wide-bandgap SemiconductorEngineeringElectrical EvidenceBand OffsetUnstable Anodic Interface	2008	70
Bipolar Resistive Switching Memory Using Cu Metallic Filament in Ge[sub 0.4]Se[sub 0.6] Solid Electrolyte S. Z. Rahaman, S. Maikap, Hsien‐Chin Chiu, Electrochemical and Solid-State Letters Materials ScienceMaterials EngineeringElectrical EngineeringSolid ElectrolyteEngineering	2010	59
Band offsets and charge storage characteristics of atomic layer deposited high-k HfO2∕TiO2 multilayers S. Maikap, T.-Y. Wang, P. J. Tzeng, Applied Physics Letters EngineeringHysteresis Memory WindowOptoelectronic DevicesHigh-k Hfo2∕tio2 MultilayersAtomic Layer	2007	58
Novel SONOS-Type Nonvolatile Memory Device With Optimal Al Doping in HfAlO Charge-Trapping Layer Ping-Hung Tsai, Kuei‐Shu Chang‐Liao, Chu-Yung Liu, IEEE Electron Device Letters Materials ScienceNon-volatile MemoryElectrical EngineeringEngineeringMicrofabrication	2008	45
Charge storage characteristics of atomic layer deposited RuOx nanocrystals S. Maikap, T. Y. Wang, P. J. Tzeng, Applied Physics Letters Materials ScienceSemiconductorsRuox NanocrystalsEngineeringBattery Electrode Materials	2007	44
Addressing bandwidth challenges in next generation high performance network systems with 3D IC integration Li Li, Peng Su, Jie Xue, EngineeringComputer ArchitectureNew GenerationInterconnection Network ArchitectureIntegrated Circuits	2012	39
Physical and electrical characteristics of atomic layer deposited TiN nanocrystal memory capacitors S. Maikap, P. J. Tzeng, H. Y. Lee, Applied Physics Letters EngineeringEmerging Memory TechnologyHysteresis Memory WindowAtomic LayerPhase Change Memory	2007	38

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