P. J. Tzeng

Low power and high speed bipolar switching with a thin reactive Ti buffer layer in robust HfO2 based RRAM

Hsuan‐Yu Lee, P. S. Chen, Tong Wu et al. · 2008 · 619 citations

Non-volatile Memory, Engineering, Memory Design +18

Low-Power and Nanosecond Switching in Robust Hafnium Oxide Resistive Memory With a Thin Ti Cap

H.Y. Lee, Y.S. Chen, P.S. Chen et al. · IEEE Electron Device Letters · 2009 · 197 citations

Non-volatile Memory, Engineering, Phase Change Memory +18

Charge trapping characteristics of atomic-layer-deposited HfO₂ films with Al₂O₃ as a blocking oxide for high-density non-volatile memory device applications

S. Maikap, H. Y. Lee, T-Y Wang et al. · Semiconductor Science and Technology · 2007 · 136 citations

Materials Science, Non-volatile Memory, Electrical Engineering +11

Electrical evidence of unstable anodic interface in Ru∕HfOx∕TiN unipolar resistive memory

Heng Yuan Lee, Pang Shiu Chen, Tai Yuan Wu et al. · Applied Physics Letters · 2008 · 70 citations

Wide-bandgap Semiconductor, Engineering, Electrical Evidence +18

Bipolar Resistive Switching Memory Using Cu Metallic Filament in Ge[sub 0.4]Se[sub 0.6] Solid Electrolyte

S. Z. Rahaman, S. Maikap, Hsien‐Chin Chiu et al. · Electrochemical and Solid-State Letters · 2010 · 59 citations

Materials Science, Materials Engineering, Electrical Engineering +11