S. Z. Rahaman

Conductive-bridging random access memory: challenges and opportunity for 3D architecture

Debanjan Jana, Sourav Roy, Rajeswar Panja et al. · Nanoscale Research Letters · 2015 · 88 citations · Full text

Engineering, Materials Engineering, Materials Science +17

Excellent resistive memory characteristics and switching mechanism using a Ti nanolayer at the Cu/TaOx interface

S. Z. Rahaman, S. Maikap, Ta–Chang Tien et al. · Nanoscale Research Letters · 2012 · 87 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17

The Role of Ti Buffer Layer Thickness on the Resistive Switching Properties of Hafnium Oxide-Based Resistive Switching Memories

S. Z. Rahaman, Yu-De Lin, Heng-Yuan Lee et al. · Langmuir · 2017 · 69 citations

Engineering, Electrical Engineering, Materials Science +15

Bipolar Resistive Switching Memory Using Cu Metallic Filament in Ge[sub 0.4]Se[sub 0.6] Solid Electrolyte

S. Z. Rahaman, S. Maikap, Hsien‐Chin Chiu et al. · Electrochemical and Solid-State Letters · 2010 · 60 citations

Natural Sciences, Electrical Engineering, Materials Science +17

Impact of TaOx nanolayer at the GeSex/W interface on resistive switching memory performance and investigation of Cu nanofilament

S. Z. Rahaman, S. Maikap, W. S. Chen et al. · Journal of Applied Physics · 2012 · 58 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17