Heng-Yuan Lee

Metal–Oxide RRAM

H.-S. Philip Wong, Heng-Yuan Lee, Shimeng Yu et al. · Proceedings of the IEEE · 2012 · 2.7K citations

Engineering, Materials Engineering, Materials Science +15

A 4Mb embedded SLC resistive-RAM macro with 7.2ns read-write random-access time and 160ns MLC-access capability

Shyh-Shyuan Sheu, Meng‐Fan Chang, Ku-Feng Lin et al. · 2011 · 247 citations

Engineering, Computer Engineering, Computer Science +16

15.2 A 28nm 64Kb Inference-Training Two-Way Transpose Multibit 6T SRAM Compute-in-Memory Macro for AI Edge Chips

Jian-Wei Su, Xin Si, Yen-Chi Chou et al. · 2020 · 181 citations

Computing, Computer Engineering, Computer Science +14

Low-Power Switching of Nonvolatile Resistive Memory Using Hafnium Oxide

Heng-Yuan Lee, Pang-Shiu Chen, Ching‐Chiun Wang et al. · Japanese Journal of Applied Physics · 2007 · 172 citations

Natural Sciences, Materials Engineering, Materials Science +17

An Ultrathin Forming-Free $\hbox{HfO}_{x}$ Resistance Memory With Excellent Electrical Performance

Yu‐Sheng Chen, Heng-Yuan Lee, Pang-Shiu Chen et al. · IEEE Electron Device Letters · 2010 · 138 citations

Natural Sciences, Materials Engineering, Materials Science +17