Ku-Feng Lin

A 4Mb embedded SLC resistive-RAM macro with 7.2ns read-write random-access time and 160ns MLC-access capability

Shyh-Shyuan Sheu, Meng‐Fan Chang, Ku-Feng Lin et al. · 2011 · 245 citations

Hardware Security, Mlc-access Capability, Electrical Engineering +15

19.4 embedded 1Mb ReRAM in 28nm CMOS with 0.27-to-1V read using swing-sample-and-couple sense amplifier and self-boost-write-termination scheme

Meng‐Fan Chang, Jui-Jen Wu, Tun-Fei Chien et al. · 2014 · 149 citations

Non-volatile Memory, Resistive Ram, Engineering +22

A High-Speed 7.2-ns Read-Write Random Access 4-Mb Embedded Resistive RAM (ReRAM) Macro Using Process-Variation-Tolerant Current-Mode Read Schemes

Meng‐Fan Chang, Shyh-Shyuan Sheu, Ku-Feng Lin et al. · IEEE Journal of Solid-State Circuits · 2013 · 96 citations

Non-volatile Memory, Electrical Engineering, Reference Current Distribution +10

A 0.5V 4Mb logic-process compatible embedded resistive RAM (ReRAM) in 65nm CMOS using low-voltage current-mode sensing scheme with 45ns random read time

Meng‐Fan Chang, Che-Wei Wu, Chia-Cheng Kuo et al. · 2012 · 80 citations

Logic-process Compatible, Non-volatile Memory, Sub Xmlns +17

Inhibition of TDP-43 Aggregation by Nucleic Acid Binding

Yichen Huang, Ku-Feng Lin, Ruei‐Yu He et al. · PLoS ONE · 2013 · 76 citations · Full text