Sourav Roy - Concepedia

Author

Sourav Roy

Chang Gung University ORCID

Also Known As

S. Guha Roy, S. Roy, Sourav Roy

Publications

612

Citations

H-Index

Concepts

All Affiliations

Chang Gung University Xi'an Jiaotong University Industrial Technology Research Institute Shanghai Institute of Technical Physics Simon Fraser University

About

Sourav Roy is an author at Chang Gung University specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	5	5	176
2	Applied Physics	4	4	160
3	Electrical Engineering	2	2	29
4	Medicine	1	1	78
5	Computer Engineering	1	1	78

Sourav Roy

Publications

495

Citations

H-Index

Page 1

	Year	Citations
Toward a Reliable Synaptic Simulation Using Al-Doped HfO<sub>2</sub> RRAM Sourav Roy, Gang Niu, Qiang Wang, ACS Applied Materials & Interfaces	2020	127
Conductive-bridging random access memory: challenges and opportunity for 3D architecture Debanjan Jana, Sourav Roy, Rajeswar Panja, Nanoscale Research Letters	2015	87
Interface-engineered reliable HfO<sub>2</sub>-based RRAM for synaptic simulation Qiang Wang, Gang Niu, Sourav Roy, Journal of Materials Chemistry C Synaptic PlasticityMemory ArchitectureAnalog MemoryEngineeringMedicine	2019	78
Understanding of multi-level resistive switching mechanism in GeOx through redox reaction in H2O2/sarcosine prostate cancer biomarker detection Subhranu Samanta, S. Z. Rahaman, Anisha Roy, Scientific Reports	2017	40
Improved resistive switching phenomena and mechanism using Cu-Al alloy in a new Cu:AlOx/TaOx/TiN structure Sourav Roy, S. Maikap, Gopinathan Pillai Sreekanth, Journal of Alloys and Compounds Materials EngineeringMaterials ScienceAluminium NitrideEngineeringCu-al Alloy	2015	36
Evolution of resistive switching mechanism through H 2 O 2 sensing by using TaO x -based material in W/Al 2 O 3 /TaO x /TiN structure Somsubhra Chakrabarti, Rajeswar Panja, Sourav Roy, Applied Surface Science Materials ScienceIi-vi SemiconductorTransition Metal ChalcogenidesEngineeringNanoelectronics	2017	33
Observation of Resistive Switching Memory by Reducing Device Size in a New Cr/CrO x /TiO x /TiN Structure Debanjan Jana, Subhranu Samanta, Sourav Roy, Nano-Micro Letters	2015	28
Impact of device size and thickness of Al2O3 film on the Cu pillar and resistive switching characteristics for 3D cross-point memory application Rajeswar Panja, Sourav Roy, Debanjan Jana, Nanoscale Research Letters	2014	23
Comparison of resistive switching characteristics by using e-gun/sputter deposited SiOx film in W/SiOx/TiN structure and pH/creatinine sensing through iridium electrode Sourav Roy, Anisha Roy, Rajeswar Panja, Journal of Alloys and Compounds Materials ScienceElectrical EngineeringEngineeringW/siox/tin StructureIridium Electrode	2017	16
Reliable resistive switching of epitaxial single crystalline cubic Y-HfO <sub>2</sub> RRAMs with Si as bottom electrodes Yankun Wang, Gang Niu, Qiang Wang, Nanotechnology	2020	14

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