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Publication | Open Access

Excellent resistive memory characteristics and switching mechanism using a Ti nanolayer at the Cu/TaOx interface

DOIFull Paper Access

86

Citations

48

References

2012

Year

S. Z. Rahaman, S. Maikap, Ta–Chang Tien, Heng-Yuan Lee, Wei-Su Chen, Frederick T. Chen, Ming‐Jer Kao, Ming‐Jinn Tsai
Nanoscale Research Letters

References

YearCitations

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