Wei-Su Chen

Excellent resistive memory characteristics and switching mechanism using a Ti nanolayer at the Cu/TaOx interface

S. Z. Rahaman, S. Maikap, Ta–Chang Tien et al. · Nanoscale Research Letters · 2012 · 87 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17

The Role of Ti Buffer Layer Thickness on the Resistive Switching Properties of Hafnium Oxide-Based Resistive Switching Memories

S. Z. Rahaman, Yu-De Lin, Heng-Yuan Lee et al. · Langmuir · 2017 · 69 citations

Engineering, Electrical Engineering, Materials Science +15

Formation polarity dependent improved resistive switching memory characteristics using nanoscale (1.3 nm) core-shell IrOx nano-dots

Writam Banerjee, S. Maikap, Chao‐Sung Lai et al. · Nanoscale Research Letters · 2012 · 58 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17

Robust High-Resistance State and Improved Endurance of $\hbox{HfO}_{X}$ Resistive Memory by Suppression of Current Overshoot

Yu-Sheng Chen, Heng-Yuan Lee, Pang-Shiu Chen et al. · IEEE Electron Device Letters · 2011 · 58 citations

Engineering, Materials Engineering, Materials Science +16

Novel Defects-Trapping ${\rm TaO}_{\rm X}/{\rm HfO}_{\rm X}$ RRAM With Reliable Self-Compliance, High Nonlinearity, and Ultra-Low Current

Yu-Sheng Chen, Heng-Yuan Lee, Pang-Shiu Chen et al. · IEEE Electron Device Letters · 2014 · 54 citations

Engineering, Electrical Engineering, Materials Science +17