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Publication | Open Access

Formation polarity dependent improved resistive switching memory characteristics using nanoscale (1.3 nm) core-shell IrOx nano-dots

DOIFull Paper Access

56

Citations

32

References

2012

Year

Writam Banerjee, S. Maikap, Chao‐Sung Lai, Yiyan Chen, Ta–Chang Tien, Heng-Yuan Lee, Wei-Su Chen, Frederick T. Chen, Ming‐Jer Kao, Ming‐Jinn Tsai,
Nanoscale Research Letters

References

YearCitations

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