Concepedia

Capacitance-voltage Characterization

Capacitance-Voltage Characterization is a semiconductor device analysis technique that distinguishes itself by measuring the capacitance of a MOS capacitor as a function of applied DC bias voltage to determine critical electrical properties such as oxide thickness, flatband voltage, and interface charge density.

2.1K

Publications

84.1K

Citations

7.7K

Authors

1.3K

Institutions

Publications per year

2017–2026

238

Variants

C-v Characterization

Parents

Publications

2.1K

Barrier inhomogeneities at Schottky contacts

J.H. Werner, H. Güttler · Journal of Applied Physics · 1991 · 1.6K citations

, , +17

Hafnium and zirconium silicates for advanced gate dielectrics

G. D. Wilk, Robert M. Wallace, J. Anthony · Journal of Applied Physics · 2000 · 972 citations

, , +17

Quantum-mechanical modeling of electron tunneling current from the inversion layer of ultra-thin-oxide nMOSFET's

S.-H. Lo, D. A. Buchanan, W. Wang · IEEE Electron Device Letters · 1997 · 812 citations

, , +16

Surface states at steam-grown silicon-silicon dioxide interfaces

C. N. Berglund · IEEE Transactions on Electron Devices · 1966 · 671 citations

, , +17

Interfacial Degradation of Planar Lead Halide Perovskite Solar Cells

Antonio Guerrero, Jingbi You, Clara Aranda et al. · ACS Nano · 2015 · 513 citations

, , +17

1–5 of 2.1K

Authors

7.7K

  1. UK
    Umesh K. Mishra

    University of California, Santa Barbara, United States

    17 publications · 1.1K citations

    15

    h-index

  2. TH
    Tamotsu Hashizume

    Hokkaido University, Japan

    16 publications · 993 citations

    14

    h-index

  3. AT
    A. Türüt

    Atatürk University, Türkiye

    13 publications · 671 citations

    13

    h-index

  4. ŞA
    Ş. Altındal

    Gazi University, Türkiye

    13 publications · 707 citations

    13

    h-index

  5. TC
    Ting‐Chang Chang

    National Sun Yat-sen University, Taiwan

    14 publications · 316 citations

    13

    h-index

1–5 of 7.7K

Institutions

1.3K

  1. Centre National de la Recherche Scientifique

    Paris, France

    27 h-index

    211 publications

    7.5K citations

  2. University of California, Santa Barbara

    Santa Barbara, United States

    24 h-index

    174 publications

    11.5K citations

  3. Stanford University

    Stanford, United States

    24 h-index

    114 publications

    6.9K citations

  4. North Carolina State University

    Raleigh, United States

    22 h-index

    122 publications

    7.4K citations

  5. Seoul National University

    Seoul, South Korea

    21 h-index

    112 publications

    4.7K citations

  6. IMEC

    Leuven, Belgium

    21 h-index

    175 publications

    9.8K citations

  7. University of Illinois Urbana-Champaign

    Urbana, United States

    20 h-index

    88 publications

    4.3K citations

  8. National Yang Ming Chiao Tung University

    Hsinchu, Taiwan

    20 h-index

    109 publications

    4K citations

1–8 of 1.3K

Venues

  1. Applied Physics Letters

    486 publications · 23.5K citations

    76

    h-index

  2. Journal of Applied Physics

    369 publications · 18.5K citations

    64

    h-index

  3. IEEE Transactions on Electron Devices

    99 publications · 5.2K citations

    36

    h-index

  4. Japanese Journal of Applied Physics

    JJAP · 138 publications · 4.3K citations

    32

    h-index

  5. IEEE Electron Device Letters

    49 publications · 2.7K citations

    26

    h-index

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