S.-H. Lo - Concepedia

Concepedia

Author

S.-H. Lo

IBM (United States)

Also Known As

S. H. Lo, S.-H. Lo, S.H. Lo, Shiang-Jiun Lo, Shin‐Shian Lo, Suzanne Lo

23

Publications

1.2K

Citations

8

H-Index

18

Concepts

All Affiliations

IBM (United States)IBM Research - Thomas J. Watson Research Center National Yang Ming Chiao Tung University

SL

About

S.-H. Lo is an author at IBM (United States) specializing in engineering, electrical engineering, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	8	8	1.2K
2	Applied Physics	7	7	1.2K
3	Electrical Engineering	7	7	1.2K
4	Physics	3	3	1K
5	Materials Engineering	1	1	21

S.-H. Lo

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8

Publications

1.2K

Citations

8

H-Index

	Year	Citations
Quantum-mechanical modeling of electron tunneling current from the inversion layer of ultra-thin-oxide nMOSFET's S.-H. Lo, D. A. Buchanan, Yuan Taur, IEEE Electron Device Letters Device ModelingInversion LayerElectrical EngineeringQuantum-mechanical ModelingEngineering	1997	807
Modeling and characterization of quantization, polysilicon depletion, and direct tunneling effects in MOSFETs with ultrathin oxides S.-H. Lo, D. A. Buchanan, Yuan Taur IBM Journal of Research and Development Device ModelingUltrathin OxidesElectrical EngineeringQuantum-mechanical ModelEngineering	1999	196
Reliability and integration of ultra-thin gate dielectrics for advanced CMOS D. A. Buchanan, S.-H. Lo Microelectronic Engineering Electrical EngineeringEngineeringBias Temperature InstabilityApplied PhysicsTime-dependent Dielectric Breakdown	1997	95
Electrical characteristics and reliability of sub-3 nm gate oxides grown on nitrogen implanted silicon substrates L.K. Han, S. Crowder, M. Hargrove, Electrical CharacteristicsElectrical EngineeringEngineeringNanoelectronicsStress-induced Leakage Current	2002	30
Determination of ultra-thin oxide voltages and thickness and the impact on reliability projection Ernest Y. Wu, S.-H. Lo, W.W. Abadeer, EngineeringMosfet StructuresSemiconductor DeviceReliability EngineeringNanoelectronics	2002	21
Image force effects and the dielectric response of SiO2 in electron transport across metal–oxide–semiconductor structures H. J. Wen, R. Ludeke, D. M. Newns, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films EngineeringMicroscopyOptoelectronic DevicesSemiconductor DeviceSemiconductors	1997	19
Two-dimensional simulation of the drain-current transient effect in GaAs MESFETs S.-H. Lo, C.P. Lee Solid-State Electronics Device ModelingElectrical EngineeringSemiconductor DeviceEngineeringElectronic Engineering	1991	16
Numerical analysis of the looping effect in GaAs MESFET's S.-H. Lo, C.-P. Lee IEEE Transactions on Electron Devices Device ModelingSemiconductor TechnologyElectrical EngineeringEngineeringLooping Phenomenon	1992	11

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