S.-H. Lo

Quantum-mechanical modeling of electron tunneling current from the inversion layer of ultra-thin-oxide nMOSFET's

S.-H. Lo, D. A. Buchanan, Yuan Taur et al. · IEEE Electron Device Letters · 1997 · 807 citations

Device Modeling, Inversion Layer, Electrical Engineering +13

Modeling and characterization of quantization, polysilicon depletion, and direct tunneling effects in MOSFETs with ultrathin oxides

S.-H. Lo, D. A. Buchanan, Yuan Taur · IBM Journal of Research and Development · 1999 · 196 citations

Device Modeling, Ultrathin Oxides, Electrical Engineering +14

Reliability and integration of ultra-thin gate dielectrics for advanced CMOS

D. A. Buchanan, S.-H. Lo · Microelectronic Engineering · 1997 · 95 citations

Electrical Engineering, Engineering, Bias Temperature Instability +6

Electrical characteristics and reliability of sub-3 nm gate oxides grown on nitrogen implanted silicon substrates

L.K. Han, S. Crowder, M. Hargrove et al. · 2002 · 30 citations

Electrical Characteristics, Electrical Engineering, Engineering +12

Determination of ultra-thin oxide voltages and thickness and the impact on reliability projection

Ernest Y. Wu, S.-H. Lo, W.W. Abadeer et al. · 2002 · 21 citations

Engineering, Mosfet Structures, Semiconductor Device +19