Frederick T. Chen

RRAM Defect Modeling and Failure Analysis Based on March Test and a Novel Squeeze-Search Scheme

Ching‐Yi Chen, Hsiu-Chuan Shih, Cheng‐Wen Wu et al. · IEEE Transactions on Computers · 2014 · 253 citations

Engineering, Computer Engineering, Electrical Engineering +17

A 4Mb embedded SLC resistive-RAM macro with 7.2ns read-write random-access time and 160ns MLC-access capability

Shyh-Shyuan Sheu, Meng‐Fan Chang, Ku-Feng Lin et al. · 2011 · 247 citations

Engineering, Computer Engineering, Computer Science +16

A High-Speed 7.2-ns Read-Write Random Access 4-Mb Embedded Resistive RAM (ReRAM) Macro Using Process-Variation-Tolerant Current-Mode Read Schemes

Meng‐Fan Chang, Shyh-Shyuan Sheu, Ku-Feng Lin et al. · IEEE Journal of Solid-State Circuits · 2013 · 97 citations

Engineering, Computer Engineering, Electrical Engineering +16

Excellent resistive memory characteristics and switching mechanism using a Ti nanolayer at the Cu/TaOx interface

S. Z. Rahaman, S. Maikap, Ta–Chang Tien et al. · Nanoscale Research Letters · 2012 · 87 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17

A 5ns fast write multi-level non-volatile 1 K bits RRAM memory with advance write scheme

Shyh-Shyuan Sheu, Pei-Chia Chiang, Wen-Pin Lin et al. · 2009 · 79 citations

Engineering, Computer Engineering, Electrical Engineering +13