Frederick T. Chen

A 4Mb embedded SLC resistive-RAM macro with 7.2ns read-write random-access time and 160ns MLC-access capability

Shyh-Shyuan Sheu, Meng‐Fan Chang, Ku-Feng Lin et al. · 2011 · 245 citations

Hardware Security, Mlc-access Capability, Electrical Engineering +15

RRAM Defect Modeling and Failure Analysis Based on March Test and a Novel Squeeze-Search Scheme

Ching‐Yi Chen, Hsiu-Chuan Shih, Cheng‐Wen Wu et al. · IEEE Transactions on Computers · 2014 · 244 citations

Non-volatile Memory, Engineering, Emerging Memory Technology +23

A High-Speed 7.2-ns Read-Write Random Access 4-Mb Embedded Resistive RAM (ReRAM) Macro Using Process-Variation-Tolerant Current-Mode Read Schemes

Meng‐Fan Chang, Shyh-Shyuan Sheu, Ku-Feng Lin et al. · IEEE Journal of Solid-State Circuits · 2013 · 96 citations

Non-volatile Memory, Electrical Engineering, Reference Current Distribution +10

Excellent resistive memory characteristics and switching mechanism using a Ti nanolayer at the Cu/TaOx interface

S. Z. Rahaman, S. Maikap, Ta–Chang Tien et al. · Nanoscale Research Letters · 2012 · 86 citations · Full text

A 5ns fast write multi-level non-volatile 1 K bits RRAM memory with advance write scheme

Shyh-Shyuan Sheu, Pei-Chia Chiang, Wen-Pin Lin et al. · 2009 · 79 citations

Non-volatile Memory, Engineering, Emerging Memory Technology +18