Ming‐Jinn Tsai

Metal–Oxide RRAM

H.-S. Philip Wong, Heng-Yuan Lee, Shimeng Yu et al. · Proceedings of the IEEE · 2012 · 2.7K citations

Engineering, Materials Engineering, Materials Science +15

Unipolar resistive switching characteristics of ZnO thin films for nonvolatile memory applications

Wen-Yuan Chang, Yen-Chao Lai, Tai‐Bor Wu et al. · Applied Physics Letters · 2008 · 467 citations

Natural Sciences, Materials Engineering, Materials Science +17

A 4Mb embedded SLC resistive-RAM macro with 7.2ns read-write random-access time and 160ns MLC-access capability

Shyh-Shyuan Sheu, Meng‐Fan Chang, Ku-Feng Lin et al. · 2011 · 247 citations

Engineering, Computer Engineering, Computer Science +16

Formation and Instability of Silver Nanofilament in Ag-Based Programmable Metallization Cells

Chang-Po Hsiung, Hsin-Wei Liao, Jon-Yiew Gan et al. · ACS Nano · 2010 · 211 citations

Natural Sciences, Materials Engineering, Materials Science +15

Influence of electrode material on the resistive memory switching property of indium gallium zinc oxide thin films

Min-Chen Chen, Ting‐Chang Chang, Chih-Tsung Tsai et al. · Applied Physics Letters · 2010 · 191 citations

Natural Sciences, Materials Engineering, Materials Science +17