Ming‐Jer Kao

A 4Mb embedded SLC resistive-RAM macro with 7.2ns read-write random-access time and 160ns MLC-access capability

Shyh-Shyuan Sheu, Meng‐Fan Chang, Ku-Feng Lin et al. · 2011 · 245 citations

Hardware Security, Mlc-access Capability, Electrical Engineering +15

Redox Reaction Switching Mechanism in RRAM Device With $\hbox{Pt/CoSiO}_{X}\hbox{/}\hbox{TiN}$ Structure

Yong-En Syu, Ting‐Chang Chang, Tsung‐Ming Tsai et al. · IEEE Electron Device Letters · 2011 · 124 citations

Non-volatile Memory, Engineering, Emerging Memory Technology +20

A High-Speed 7.2-ns Read-Write Random Access 4-Mb Embedded Resistive RAM (ReRAM) Macro Using Process-Variation-Tolerant Current-Mode Read Schemes

Meng‐Fan Chang, Shyh-Shyuan Sheu, Ku-Feng Lin et al. · IEEE Journal of Solid-State Circuits · 2013 · 96 citations

Non-volatile Memory, Electrical Engineering, Reference Current Distribution +10

Interfacial and annealing effects on magnetic properties of CoFeB thin films

Yung-Hung Wang, Wei‐Chuan Chen, Shan-Yi Yang et al. · Journal of Applied Physics · 2006 · 92 citations

Materials Science, Magnetism, Ferromagnetism +15

Excellent resistive memory characteristics and switching mechanism using a Ti nanolayer at the Cu/TaOx interface

S. Z. Rahaman, S. Maikap, Ta–Chang Tien et al. · Nanoscale Research Letters · 2012 · 86 citations · Full text