Ming‐Jer Kao - Concepedia

Author

Ming‐Jer Kao

Industrial Technology Research Institute ORCID

Also Known As

M. J. Kao, M. Kao, M.-J Kao, M.-J. Kao, M.J. Kao, Ming-Jer Kao, Ming-jer Kao, Mingjer Kao, Ming‐Jer Kao, Yung-Fa Chou

154

Publications

2.4K

Citations

H-Index

110

Concepts

All Affiliations

Industrial Technology Research Institute ITRI International National Tsing Hua University Chang Gung University National Chung Hsing University

About

Ming‐Jer Kao is an author at Industrial Technology Research Institute specializing in engineering, microelectronics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	24	49	1.8K
2	Applied Physics	17	21	799
3	Natural Sciences	2	2	132
4	Chemical Engineering	1	1	22
5	Chemistry	1	1	124

Ming‐Jer Kao

Publications

2.2K

Citations

H-Index

Page 1

	Year	Citations
A 4Mb embedded SLC resistive-RAM macro with 7.2ns read-write random-access time and 160ns MLC-access capability Shyh-Shyuan Sheu, Meng‐Fan Chang, Ku-Feng Lin, Hardware SecurityMlc-access CapabilityElectrical EngineeringEmbedded RramEngineering	2011	245
Redox Reaction Switching Mechanism in RRAM Device With $\hbox{Pt/CoSiO}_{X}\hbox{/}\hbox{TiN}$ Structure Yong-En Syu, Ting‐Chang Chang, Tsung‐Ming Tsai, IEEE Electron Device Letters Non-volatile MemoryEngineeringEmerging Memory TechnologyChemistryElectronic Devices	2011	124
A High-Speed 7.2-ns Read-Write Random Access 4-Mb Embedded Resistive RAM (ReRAM) Macro Using Process-Variation-Tolerant Current-Mode Read Schemes Meng‐Fan Chang, Shyh-Shyuan Sheu, Ku-Feng Lin, IEEE Journal of Solid-State Circuits Non-volatile MemoryElectrical EngineeringReference Current DistributionEngineering4-Mb Reram Macro	2013	96
Interfacial and annealing effects on magnetic properties of CoFeB thin films Yung-Hung Wang, Wei‐Chuan Chen, Shan-Yi Yang, Journal of Applied Physics Materials ScienceMagnetismFerromagnetismMagnetic PropertiesEngineering	2006	92
Excellent resistive memory characteristics and switching mechanism using a Ti nanolayer at the Cu/TaOx interface S. Z. Rahaman, S. Maikap, Ta–Chang Tien, Nanoscale Research Letters	2012	86
A 5ns fast write multi-level non-volatile 1 K bits RRAM memory with advance write scheme Shyh-Shyuan Sheu, Pei-Chia Chiang, Wen-Pin Lin, Non-volatile MemoryEngineeringEmerging Memory TechnologyComputer ArchitectureMulti-channel Memory Architecture	2009	79
Repeatable unipolar/bipolar resistive memory characteristics and switching mechanism using a Cu nanofilament in a GeOx film S. Z. Rahaman, S. Maikap, Wen‐Shan Chen, Applied Physics Letters Materials ScienceSemiconductorsElectrical EngineeringEngineeringMemory Characteristics	2012	58
How to select adhesive materials for temporary bonding and de-bonding of 200mm and 300mm thin-wafer handling for 3D IC integration? Wei‐Chi Tsai, Hwan‐You Chang, Chi‐Hsien Chien, EngineeringMechanical EngineeringVacuum DeviceThin WafersWafer Scale Processing	2011	58
Formation polarity dependent improved resistive switching memory characteristics using nanoscale (1.3 nm) core-shell IrOx nano-dots Writam Banerjee, S. Maikap, Chao‐Sung Lai, Nanoscale Research Letters	2012	56
Fast-Write Resistive RAM (RRAM) for Embedded Applications Shyh-Shyuan Sheu, Kuo‐Hsing Cheng, Meng‐Fan Chang, IEEE Design & Test of Computers Hardware SecurityNon-volatile MemoryElectrical EngineeringMemory ArchitectureEngineering	2010	56

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