Yong-En Syu

Physical and chemical mechanisms in oxide-based resistance random access memory

Kuan‐Chang Chang, Ting‐Chang Chang, Tsung‐Ming Tsai et al. · Nanoscale Research Letters · 2015 · 146 citations · Full text

Engineering, Materials Engineering, Materials Science +16

Redox Reaction Switching Mechanism in RRAM Device With $\hbox{Pt/CoSiO}_{X}\hbox{/}\hbox{TiN}$ Structure

Yong-En Syu, Ting‐Chang Chang, Tsung‐Ming Tsai et al. · IEEE Electron Device Letters · 2011 · 124 citations

Natural Sciences, Materials Engineering, Materials Science +17

Atomic-level quantized reaction of HfO_x memristor

Yong-En Syu, Ting‐Chang Chang, Jyun‐Hao Lou et al. · Applied Physics Letters · 2013 · 110 citations

Natural Sciences, Materials Science, Physics +17

Characteristics and Mechanisms of Silicon-Oxide-Based Resistance Random Access Memory

Kuan‐Chang Chang, Tsung‐Ming Tsai, Ting‐Chang Chang et al. · IEEE Electron Device Letters · 2013 · 67 citations

Engineering, Electrical Engineering, Materials Science +17

Origin of Hopping Conduction in Graphene-Oxide-Doped Silicon Oxide Resistance Random Access Memory Devices

Kuan‐Chang Chang, Rui Zhang, Ting‐Chang Chang et al. · IEEE Electron Device Letters · 2013 · 58 citations

Natural Sciences, Materials Science, Physics +17