Kuan‐Chang Chang

Resistance random access memory

Ting‐Chang Chang, Kuan‐Chang Chang, Tsung‐Ming Tsai et al. · Materials Today · 2015 · 482 citations · Full text

Non-volatile Memory, Engineering, Computer Architecture +18

HfO₂‐Based Memristor as an Artificial Synapse for Neuromorphic Computing with Tri‐Layer HfO₂/BiFeO₃/HfO₂ Design

Zehui Peng, Facai Wu, Li Jiang et al. · Advanced Functional Materials · 2021 · 153 citations

Engineering, Emerging Memory Technology, Optoelectronic Devices +21

Physical and chemical mechanisms in oxide-based resistance random access memory

Kuan‐Chang Chang, Ting‐Chang Chang, Tsung‐Ming Tsai et al. · Nanoscale Research Letters · 2015 · 146 citations · Full text

Functionally Complete Boolean Logic in 1T1R Resistive Random Access Memory

Zhuorui Wang, Yu‐Ting Su, Yi Li et al. · IEEE Electron Device Letters · 2016 · 127 citations

Hardware Security, Non-volatile Memory, Electrical Engineering +15

Redox Reaction Switching Mechanism in RRAM Device With $\hbox{Pt/CoSiO}_{X}\hbox{/}\hbox{TiN}$ Structure

Yong-En Syu, Ting‐Chang Chang, Tsung‐Ming Tsai et al. · IEEE Electron Device Letters · 2011 · 124 citations

Non-volatile Memory, Engineering, Emerging Memory Technology +20