Tsung‐Ming Tsai

Resistance random access memory

Ting‐Chang Chang, Kuan‐Chang Chang, Tsung‐Ming Tsai et al. · Materials Today · 2015 · 487 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +14

Physical and chemical mechanisms in oxide-based resistance random access memory

Kuan‐Chang Chang, Ting‐Chang Chang, Tsung‐Ming Tsai et al. · Nanoscale Research Letters · 2015 · 146 citations · Full text

Engineering, Materials Engineering, Materials Science +16

Functionally Complete Boolean Logic in 1T1R Resistive Random Access Memory

Zhuorui Wang, Yu‐Ting Su, Yi Li et al. · IEEE Electron Device Letters · 2016 · 132 citations

Engineering, Computer Engineering, Electrical Engineering +15

Redox Reaction Switching Mechanism in RRAM Device With $\hbox{Pt/CoSiO}_{X}\hbox{/}\hbox{TiN}$ Structure

Yong-En Syu, Ting‐Chang Chang, Tsung‐Ming Tsai et al. · IEEE Electron Device Letters · 2011 · 124 citations

Natural Sciences, Materials Engineering, Materials Science +17

Atomic-level quantized reaction of HfO_x memristor

Yong-En Syu, Ting‐Chang Chang, Jyun‐Hao Lou et al. · Applied Physics Letters · 2013 · 110 citations

Natural Sciences, Materials Science, Physics +17