In-Hwan Baek

Electrical observations of filamentary conductions for the resistive memory switching in NiO films

Dongso Kim, Sunae Seo, Seung‐Eon Ahn et al. · Applied Physics Letters · 2006 · 529 citations

Filamentary Conductions, Experimental Results, Electrical Engineering +13

Highly scalable non-volatile resistive memory using simple binary oxide driven by asymmetric unipolar voltage pulses

In-Hwan Baek, M.S. Lee, S. Sco et al. · 2005 · 518 citations

Materials Science, Non-volatile Memory, Electrical Engineering +11

A Low‐Temperature‐Grown Oxide Diode as a New Switch Element for High‐Density, Nonvolatile Memories

Myoung‐Jae Lee, Sunae Seo, D.‐C. Kim et al. · Advanced Materials · 2006 · 233 citations

Non-volatile Memory, Engineering, Emerging Memory Technology +17

Multi-layer cross-point binary oxide resistive memory (OxRRAM) for post-NAND storage application

In-Hwan Baek, D.C. Kim, Myoung‐Jae Lee et al. · 2006 · 216 citations

Prototype Binary Oxide, Electrical Engineering, Non-volatile Memory +13

Improvement of resistive memory switching in NiO using IrO2

D. C. Kim, Myoung‐Jae Lee, Seung‐Eon Ahn et al. · Applied Physics Letters · 2006 · 193 citations

Materials Science, Nio Growth, Electrical Engineering +13