Myoung‐Jae Lee

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

Myoung‐Jae Lee, Chang Bum Lee, Dongsoo Lee et al. · Nature Materials · 2011 · 2.2K citations

Engineering, Materials Engineering, Materials Science +14

Reproducible resistance switching in polycrystalline NiO films

Sunae Seo, Myoung‐Jae Lee, David H. Seo et al. · Applied Physics Letters · 2004 · 934 citations

Natural Sciences, Materials Engineering, Materials Science +16

Electrical observations of filamentary conductions for the resistive memory switching in NiO films

Dongso Kim, Sunae Seo, Seung‐Eon Ahn et al. · Applied Physics Letters · 2006 · 530 citations

Natural Sciences, Electrical Engineering, Materials Science +17

Highly scalable non-volatile resistive memory using simple binary oxide driven by asymmetric unipolar voltage pulses

In-Hwan Baek, M.S. Lee, S. Sco et al. · 2005 · 520 citations

Engineering, Electrical Engineering, Materials Science +17

Two Series Oxide Resistors Applicable to High Speed and High Density Nonvolatile Memory

Myoung‐Jae Lee, Yeonsang Park, Dongseok Suh et al. · Advanced Materials · 2007 · 435 citations

Engineering, Computer Engineering, Electrical Engineering +15