A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

Myoung‐Jae Lee, Chang Bum Lee, Dongsoo Lee, +10

Nature Materials

Materials ScienceNon-volatile MemoryEngineeringNanotechnologyEmerging Memory Technology +4

All-solid-state spatial light modulator with independent phase and amplitude control for three-dimensional LiDAR applications

Junghyun Park, Byung Gil Jeong, Sun Il Kim, +18

Nature Nanotechnology

Free-space Optical NetworkPhotonicsIndependent PhaseEngineeringOptical Transmission System +4

Electrical Manipulation of Nanofilaments in Transition-Metal Oxides for Resistance-Based Memory

Myoung‐Jae Lee, Seungwu Han, Sang Ho Jeon, +12

Nano Letters

EngineeringEmerging Memory TechnologyNanocomputingPhase Change MemoryNanoelectronics +18

Modeling for bipolar resistive memory switching in transition-metal oxides

Ji Hyun Hur, Myoung‐Jae Lee, Chang Bum Lee, +2

Physical Review B

Materials ScienceElectrical EngineeringEngineeringSpecific ResistanceNanoelectronics +11

Multi-level switching of triple-layered TaOx RRAM with excellent reliability for storage class memory

Seung Ryul Lee, Young‐Bae Kim, Man Chang, +10

Non-volatile MemoryEngineeringMemory DesignMulti-level SwitchingEmerging Memory Technology +19

Bi-layered RRAM with unlimited endurance and extremely uniform switching

Young‐Bae Kim, Seung Ryul Lee, Dongsoo Lee, +9

Symposium on VLSI Technology

Non-volatile MemoryEngineeringEmerging Memory TechnologyComputer ArchitecturePhase Change Memory +15

High‐Current‐Density CuO _x/InZnO_x Thin‐Film Diodes for Cross‐Point Memory Applications

Bo Soo Kang, Seung‐Eon Ahn, Myoung‐Jae Lee, +6

Advanced Materials

SemiconductorsMaterials ScienceElectrical EngineeringElectronic DevicesHigh-temperature-prepared Silicon Diodes +12

Highly Uniform Switching of Tantalum Embedded Amorphous Oxide Using Self-Compliance Bipolar Resistive Switching

Chang Bum Lee, Dong Soo Lee, Anass Benayad, +7

IEEE Electron Device Letters

Materials ScienceMaterials EngineeringElectrical EngineeringMaterial AnalysisEngineering +9

Modeling for multilevel switching in oxide-based bipolar resistive memory

Ji‐Hyun Hur, Kyung Min Kim, Man Chang, +7

Nanotechnology

Stackable All-Oxide-Based Nonvolatile Memory With $ \hbox{Al}_{2}\hbox{O}_{3}$ Antifuse and $\hbox{p-CuO}_{x}/ \hbox{n-InZnO}_{x}$ Diode

Seung-Eon Ahn, Bo Soo Kang, Ki Hwan Kim, +4

IEEE Electron Device Letters

Materials ScienceNon-volatile MemoryElectrical EngineeringOtp Memory CellsEngineering +12