Seung Ryul Lee

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

Myoung‐Jae Lee, Chang Bum Lee, Dongsoo Lee et al. · Nature Materials · 2011 · 2.2K citations

Engineering, Materials Engineering, Materials Science +14

Physical electro-thermal model of resistive switching in bi-layered resistance-change memory

Sungho Kim, Sae‐Jin Kim, Kyung Min Kim et al. · Scientific Reports · 2013 · 245 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Multi-level switching of triple-layered TaOx RRAM with excellent reliability for storage class memory

Seung Ryul Lee, Young‐Bae Kim, Man Chang et al. · 2012 · 163 citations

Engineering, Materials Engineering, Materials Science +15

Bi-layered RRAM with unlimited endurance and extremely uniform switching

Young‐Bae Kim, Seung Ryul Lee, Dongsoo Lee et al. · Symposium on VLSI Technology · 2011 · 141 citations

Engineering, Electrical Engineering, Materials Science +15

Self‐Limited Switching in Ta₂O₅/TaO<i>_x</i> Memristors Exhibiting Uniform Multilevel Changes in Resistance

Kyung Min Kim, Seung Ryul Lee, Sungho Kim et al. · Advanced Functional Materials · 2015 · 128 citations

Engineering, Electrical Engineering, Materials Science +17