Seung Ryul Lee - Concepedia

Author

Seung Ryul Lee

Samsung (South Korea)

Also Known As

Seung Ryul Lee

Publications

3.1K

Citations

H-Index

Concepts

All Affiliations

Samsung (South Korea)Seoul National University

About

Seung Ryul Lee is an author at Samsung (South Korea) specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	8	8	2.8K
2	Applied Physics	7	7	2.7K
3	Computer Engineering	3	3	347
4	Business	1	1	17
5	Medicine	1	1	14

Seung Ryul Lee

Publications

3.1K

Citations

H-Index

Page 1

	Year	Citations
A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures Myoung‐Jae Lee, Chang Bum Lee, Dongsoo Lee, Nature Materials Materials ScienceNon-volatile MemoryEngineeringNanotechnologyEmerging Memory Technology	2011	2.2K
Physical electro-thermal model of resistive switching in bi-layered resistance-change memory Sungho Kim, Sae‐Jin Kim, Kyung Min Kim, Scientific Reports	2013	241
Multi-level switching of triple-layered TaOx RRAM with excellent reliability for storage class memory Seung Ryul Lee, Young‐Bae Kim, Man Chang, Non-volatile MemoryEngineeringMemory DesignMulti-level SwitchingEmerging Memory Technology	2012	160
Bi-layered RRAM with unlimited endurance and extremely uniform switching Young‐Bae Kim, Seung Ryul Lee, Dongsoo Lee, Symposium on VLSI Technology Non-volatile MemoryEngineeringEmerging Memory TechnologyComputer ArchitecturePhase Change Memory	2011	141
Self‐Limited Switching in Ta<sub>2</sub>O<sub>5</sub>/TaO<i><sub>x</sub></i> Memristors Exhibiting Uniform Multilevel Changes in Resistance Kyung Min Kim, Seung Ryul Lee, Sungho Kim, Advanced Functional Materials Materials ScienceSemiconductorsElectrical EngineeringElectronic DevicesEngineering	2015	125
Highly Uniform Switching of Tantalum Embedded Amorphous Oxide Using Self-Compliance Bipolar Resistive Switching Chang Bum Lee, Dong Soo Lee, Anass Benayad, IEEE Electron Device Letters Materials ScienceMaterials EngineeringElectrical EngineeringMaterial AnalysisEngineering	2011	76
Modeling for multilevel switching in oxide-based bipolar resistive memory Ji‐Hyun Hur, Kyung Min Kim, Man Chang, Nanotechnology	2012	57
Performance of threshold switching in chalcogenide glass for 3D stackable selector Sungho Kim, Young‐Bae Kim, Kyung Min Kim, Symposium on VLSI Technology Materials ScienceElectrical EngineeringEngineeringPhysicsGlass Transition	2013	46
Improved Resistive Switching Reliability in Graded NiO Multilayer for Resistive Nonvolatile Memory Devices Myoung‐Jae Lee, Chang Bum Lee, Dongsoo Lee, IEEE Electron Device Letters Non-volatile MemoryEngineeringEmerging Memory TechnologyVacuum DevicePhase Change Memory	2010	21
Energy consumption, CO<sub>2</sub>emissions, and economic growth in Korea: A causality analysis Seung Ryul Lee, Seung‐Hoon Yoo Energy Sources Part B Economics Planning and Policy Carbon DioxideEngineeringEconomic AssessmentApplied EconometricsEnvironmental Economics	2016	17

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