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Bi-layered RRAM with unlimited endurance and extremely uniform switching
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2011
Year
Non-volatile MemoryEngineeringEmerging Memory TechnologyComputer ArchitecturePhase Change MemoryNanoelectronicsBit Error RateMemory DeviceMemory DevicesElectrical EngineeringBi-layered RramData RetentionComputer EngineeringMagnetoresistive Random-access MemoryMicroelectronicsMemory ReliabilityApplied PhysicsSchottky Barrier ModelingSemiconductor MemoryResistive Random-access Memory
We demonstrate resistive random access memory (RRAM) architecture with bi-layered switching element for reliable resistive switching memory. Based on the modulated Schottky barrier modeling, several key functions to achieve a realiable bipolar switching property are extracted. Our device shows an excellent memory performance such as enduracne of 1011 cycles at 30ns, data retention of >104s at 200°C, and calculated bit error rate below 10−11.