U‐In Chung - Concepedia

Author

U‐In Chung

Also Known As

Sun Il Kim, U -In Chung, U In Chung, U-IN CHUNG, U-In Chung, U-In. Chung, U-in Chung, U. -In Chung, U. Chung, U. I. CHUNG

240

Publications

12K

Citations

H-Index

121

Concepts

All Affiliations

Samsung (South Korea)Seoul National University University of Cambridge University College London London Centre for Nanotechnology

About

U‐In Chung is an author at Samsung (South Korea) specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	39	86	9.1K
2	Applied Physics	38	78	8.4K
3	Chemical Engineering	4	4	67
4	Natural Sciences	2	2	40
5	Medicine	1	1	71

U‐In Chung

Publications

11K

Citations

H-Index

Page 1

	Year	Citations
A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures Myoung‐Jae Lee, Chang Bum Lee, Dongsoo Lee, Nature Materials Materials ScienceNon-volatile MemoryEngineeringNanotechnologyEmerging Memory Technology	2011	2.2K
Highly Stretchable Resistive Pressure Sensors Using a Conductive Elastomeric Composite on a Micropyramid Array Chwee‐Lin Choong, Mun‐Bo Shim, Byoung‐Sun Lee, Advanced Materials	2014	1.2K
Electrical observations of filamentary conductions for the resistive memory switching in NiO films Dongso Kim, Sunae Seo, Seung‐Eon Ahn, Applied Physics Letters Filamentary ConductionsExperimental ResultsElectrical EngineeringEngineeringNio Memory Cells	2006	529
Highly scalable non-volatile resistive memory using simple binary oxide driven by asymmetric unipolar voltage pulses In-Hwan Baek, M.S. Lee, S. Sco, Materials ScienceNon-volatile MemoryElectrical EngineeringEngineeringNanoelectronics	2005	518
Flutter-driven triboelectrification for harvesting wind energy Jihyun Bae, Jeongsu Lee, SeongMin Kim, Nature Communications Energy HarvestingEngineeringPiezoelectric NanogeneratorsEnergy ConversionEnergy Generation	2014	414
Vertical cell array using TCAT(Terabit Cell Array Transistor) technology for ultra high density NAND flash memory Jae Hoon Jang, Han‐Soo Kim, Wonseok Cho, Symposium on VLSI Technology Non-volatile MemoryElectrical EngineeringTcat FlashTerabit CellEngineering	2006	376
In situ observation of filamentary conducting channels in an asymmetric Ta2O5−x/TaO2−x bilayer structure Gyeong‐Su Park, Young Bae Kim, Sung Yong Park, Nature Communications EngineeringPhysicsOxide ElectronicsSitu ObservationFilamentary Conducting Channels	2013	345
Trap-limited and percolation conduction mechanisms in amorphous oxide semiconductor thin film transistors Sungsik Lee, Khashayar Ghaffarzadeh, Arokia Nathan, Applied Physics Letters Electrical EngineeringEngineeringPhysicsPower LawNanoelectronics	2011	318
p-GaN Gate HEMTs With Tungsten Gate Metal for High Threshold Voltage and Low Gate Current Injun Hwang, Jongseob Kim, Hyuk Choi, IEEE Electron Device Letters SemiconductorsWide-bandgap SemiconductorElectrical EngineeringElectronic DevicesEngineering	2013	271
Physical electro-thermal model of resistive switching in bi-layered resistance-change memory Sungho Kim, Sae‐Jin Kim, Kyung Min Kim, Scientific Reports	2013	241

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