U‐In Chung

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

Myoung‐Jae Lee, Chang Bum Lee, Dongsoo Lee et al. · Nature Materials · 2011 · 2.2K citations

Materials Science, Non-volatile Memory, Engineering +6

Highly Stretchable Resistive Pressure Sensors Using a Conductive Elastomeric Composite on a Micropyramid Array

Chwee‐Lin Choong, Mun‐Bo Shim, Byoung‐Sun Lee et al. · Advanced Materials · 2014 · 1.2K citations

Electrical observations of filamentary conductions for the resistive memory switching in NiO films

Dongso Kim, Sunae Seo, Seung‐Eon Ahn et al. · Applied Physics Letters · 2006 · 529 citations

Filamentary Conductions, Experimental Results, Electrical Engineering +13

Highly scalable non-volatile resistive memory using simple binary oxide driven by asymmetric unipolar voltage pulses

In-Hwan Baek, M.S. Lee, S. Sco et al. · 2005 · 518 citations

Materials Science, Non-volatile Memory, Electrical Engineering +11

Flutter-driven triboelectrification for harvesting wind energy

Jihyun Bae, Jeongsu Lee, SeongMin Kim et al. · Nature Communications · 2014 · 414 citations · Full text

Energy Harvesting, Engineering, Piezoelectric Nanogenerators +5