A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

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Atomic structure of conducting nanofilaments in TiO2 resistive switching memory

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‘Memristive’ switches enable ‘stateful’ logic operations via material implication

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Ferroelectric thin films: Review of materials, properties, and applications

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Natural Sciences, Materials Engineering, Materials Science +17