Concepedia
Statistics
Publications
36
Citations
5.3K
H-Index
27
Active since
2007
Affiliations
Samsung (South Korea)(Current)
University College London
University of Cambridge
London Centre for Nanotechnology
Sungkyunkwan University
Changjung Kim is an author at Samsung (South Korea) specializing in electrical engineering, materials science, and engineering.
Publications per year
2007–2013
A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures
Myoung‐Jae Lee, Chang Bum Lee, Dongsoo Lee et al. · Nature Materials · 2011 · 2.2K citations
Engineering, Materials Engineering, Materials Science +14
Amorphous gallium indium zinc oxide thin film transistors: Sensitive to oxygen molecules
Donghun Kang, Hyuck Lim, Changjung Kim et al. · Applied Physics Letters · 2007 · 345 citations
Natural Sciences, Electrical Engineering, Materials Science +17
Trap-limited and percolation conduction mechanisms in amorphous oxide semiconductor thin film transistors
Sungsik Lee, Khashayar Ghaffarzadeh, Arokia Nathan et al. · Applied Physics Letters · 2011 · 326 citations
Engineering, Electrical Engineering, Materials Science +17
Amorphous hafnium-indium-zinc oxide semiconductor thin film transistors
Changjung Kim, Sang‐Wook Kim, Je‐Hun Lee et al. · Applied Physics Letters · 2009 · 230 citations
Control of threshold voltage in ZnO-based oxide thin film transistors
Jin‐Seong Park, Jae Kyeong Jeong, Yeon‐Gon Mo et al. · Applied Physics Letters · 2008 · 187 citations
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