Hyuck Lim

Amorphous gallium indium zinc oxide thin film transistors: Sensitive to oxygen molecules

Donghun Kang, Hyuck Lim, Changjung Kim et al. · Applied Physics Letters · 2007 · 345 citations

Natural Sciences, Electrical Engineering, Materials Science +17

Source/Drain Series-Resistance Effects in Amorphous Gallium–Indium Zinc-Oxide Thin Film Transistors

Jaechul Park, Changjung Kim, Sunil Kim et al. · IEEE Electron Device Letters · 2008 · 98 citations

Engineering, Electrical Engineering, Physics +17

Double gate GaInZnO thin film transistors

Hyuck Lim, Huaxiang Yin, Jin‐Seong Park et al. · Applied Physics Letters · 2008 · 67 citations

Engineering, Electrical Engineering, Materials Science +16

Program/Erase Characteristics of Amorphous Gallium Indium Zinc Oxide Nonvolatile Memory

Huaxiang Yin, Jaewoong Hyun, Youngsoo Park et al. · IEEE Transactions on Electron Devices · 2008 · 63 citations

Engineering, Materials Engineering, Materials Science +17

Highly Stable Ga2O3-In2O3-ZnO TFT for Active-Matrix Organic Light-Emitting Diode Display Application

Chang Jung Kim, Dong‐Hun Kang, Ihun Song et al. · 2006 · 28 citations

Engineering, Materials Engineering, Materials Science +16