IEEE Electron Device Letters · 2008 · 98 citations · 10 references
EngineeringElectrical EngineeringPhysicsElectronic MaterialsMicroelectronicsSemiconductor DevicesAmorphous Electronic MaterialsAmorphous SemiconductorsField-effect TransistorsSemiconductor PhysicsSemiconductor Thin FilmsThin-film TransistorsAmorphous Indium Gallium Zinc OxideAmorphous Oxide SemiconductorsField-effect Transistor Transfer CharacteristicsMetal-oxide-semiconductor Field-effect Transistor ModelingOhmic ConductionOxide Thin-film TransistorsSource ResistanceThreshold Voltage
In this letter, we investigated the effects of source/drain series resistance on amorphous gallium-indium-doped zinc-oxide (a-GIZO) thin film transistors (TFTs). A linear least square fit of a plot of the reciprocal of channel resistance versus gate voltage yields a threshold voltage of 3.5 V and a field-effect mobility of about 13.5 cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> /Vldrs. Furthermore, in a-GIZO TFTs, most of the current flows in the distance range of 0-0.5 mum from the channel edge and shorter than that in a-Si:H TFTs. Moreover, unlike a-Si:H TFTs, a-GIZO TFTs did not show an intersection point, because they did not contain a highly doped ohmic (n+) layer below the source/drain electrodes.
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ZnO-based transparent thin-film transistors
Randy Hoffman, B. Norris, John F. Wager · Applied Physics Letters · 2003 · 1.4K citations
Natural Sciences, Electrical Engineering, Materials Science +17