Kenji Nomura - Concepedia

Author

Kenji Nomura

Tokyo Institute of Technology ORCID

Also Known As

K Nomura, K. Nomura, Kenji NOMURA, Kenji Nomura, Nomura Kenji, Nomura, Kenji

311

Publications

28.2K

Citations

H-Index

126

Concepts

All Affiliations

Tokyo Institute of Technology Japan Science and Technology Agency Nagoya University University of California San Diego Canon (Japan)

About

Kenji Nomura is an author at Tokyo Institute of Technology specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	59	121	24.2K
2	Natural Sciences	3	3	54
3	Education	2	2	47
4	Medicine	1	1	21
5	Social Sciences	1	1	25

Kenji Nomura

148

Publications

25.6K

Citations

H-Index

Page 1

	Year	Citations
Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors Kenji Nomura, Hiromichi Ohta, Akihiro Takagi, Nature Materials ScienceRoom-temperature FabricationElectrical EngineeringEngineeringFlexible Electronics	2004	7.3K
Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor Kenji Nomura, Hiromichi Ohta, Kazushige Ueda, Science Electrical EngineeringEngineeringNanoelectronicsOxide ElectronicsCompound Semiconductor	2003	1.9K
High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering Hisato Yabuta, Masafumi Sano, Katsumi Abe, Applied Physics Letters EngineeringThin Film Process TechnologyAmorphous Ingazno4 ChannelSemiconductor DeviceSemiconductors	2006	1.1K
Giant thermoelectric Seebeck coefficient of a two-dimensional electron gas in SrTiO3 Hiromichi Ohta, Sung Wng Kim, Yoriko Mune, Nature Materials Two-dimensional Electron GasEngineeringPhysicsOxide ElectronicsApplied Physics	2007	1K
Amorphous Oxide Semiconductors for High-Performance Flexible Thin-Film Transistors Kenji Nomura, Akihiro Takagi, Toshio Kamiya, Japanese Journal of Applied Physics Materials ScienceSemiconductorsElectrical EngineeringElectronic DevicesEngineering	2006	741
p -channel thin-film transistor using p-type oxide semiconductor, SnO Yoichi Ogo, Hidenori Hiramatsu, Kenji Nomura, Applied Physics Letters Materials ScienceSemiconductorsElectrical EngineeringElectronic DevicesEngineering	2008	671
Origins of High Mobility and Low Operation Voltage of Amorphous Oxide TFTs: Electronic Structure, Electron Transport, Defects and Doping Toshio Kamiya, Kenji Nomura, Hideo Hosono Journal of Display Technology EngineeringSemiconductor MaterialsThin Film Process TechnologySemiconductor DeviceSemiconductors	2009	631
Carrier transport and electronic structure in amorphous oxide semiconductor, a-InGaZnO4 Akihiro Takagi, Kenji Nomura, Hiromichi Ohta, Thin Solid Films Materials ScienceEngineeringOxide ElectronicsOxide SemiconductorsApplied Physics	2005	469
Origins of threshold voltage shifts in room-temperature deposited and annealed a-In–Ga–Zn–O thin-film transistors Kenji Nomura, Toshio Kamiya, Masahiro Hirano, Applied Physics Letters SemiconductorsSemiconductor TechnologyElectrical EngineeringElectronic DevicesEngineering	2009	353
Modeling of amorphous InGaZnO4 thin film transistors and their subgap density of states Hsing‐Hung Hsieh, Toshio Kamiya, Kenji Nomura, Applied Physics Letters Electrical EngineeringEngineeringPhysicsNanoelectronicsSubgap Density	2008	349

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