Katsumi Abe

High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering

Hisato Yabuta, Masafumi Sano, Katsumi Abe et al. · Applied Physics Letters · 2006 · 1.1K citations

Engineering, Thin Film Process Technology, Amorphous Ingazno4 Channel +17

Mobility–stability trade-off in oxide thin-film transistors

Yu‐Shien Shiah, Kihyung Sim, Yuhao Shi et al. · Nature Electronics · 2021 · 304 citations

Electrical Engineering, Engineering, Oxide Electronics +3

Two-dimensional numerical simulation of radio frequency sputter amorphous In–Ga–Zn–O thin-film transistors

Tze-Ching Fung, Chiao-Shun Chuang, Katsumi Abe et al. · Journal of Applied Physics · 2009 · 254 citations

Materials Science, Oxygen Vacancy, Electrical Engineering +15

Amorphous In–Ga–Zn–O coplanar homojunction thin-film transistor

Ayumu Sato, Katsumi Abe, Ryo Hayashi et al. · Applied Physics Letters · 2009 · 180 citations

Materials Science, Semiconductor Technology, Electrical Engineering +13

Density of States of a-InGaZnO From Temperature-Dependent Field-Effect Studies

Katsumi Abe, Hideya Kumomi, Jerzy Kanicki · IEEE Transactions on Electron Devices · 2009 · 180 citations

Engineering, Thin Film Process Technology, Semiconductor Device +17