Hideya Kumomi

High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering

Hisato Yabuta, Masafumi Sano, Katsumi Abe et al. · Applied Physics Letters · 2006 · 1.1K citations

Engineering, Electrical Engineering, Materials Science +17

Two-dimensional numerical simulation of radio frequency sputter amorphous In–Ga–Zn–O thin-film transistors

Tze-Ching Fung, Chiao-Shun Chuang, Katsumi Abe et al. · Journal of Applied Physics · 2009 · 256 citations

Engineering, Electrical Engineering, Materials Science +17

Combinatorial approach to thin-film transistors using multicomponent semiconductor channels: An application to amorphous oxide semiconductors in In–Ga–Zn–O system

Tatsuya Iwasaki, Naho Itagaki, Tohru Den et al. · Applied Physics Letters · 2007 · 239 citations

Engineering, Materials Engineering, Materials Science +17

Sputtering formation of p-type SnO thin-film transistors on glass toward oxide complimentary circuits

Hisato Yabuta, Nobuyuki Kaji, Ryo Hayashi et al. · Applied Physics Letters · 2010 · 216 citations

Engineering, Electrical Engineering, Materials Science +17

Density of States of a-InGaZnO From Temperature-Dependent Field-Effect Studies

Katsumi Abe, Hideya Kumomi, Jerzy Kanicki · IEEE Transactions on Electron Devices · 2009 · 182 citations

Engineering, Electrical Engineering, Physics +15