Jaewoong Hyun

Program/Erase Characteristics of Amorphous Gallium Indium Zinc Oxide Nonvolatile Memory

Huaxiang Yin, Jaewoong Hyun, Youngsoo Park et al. · IEEE Transactions on Electron Devices · 2008 · 63 citations

Materials Science, Semiconductors, Program/erase Characteristics +11

Adsorption-induced conversion of the carbon nanotube field effect transistor from ambipolar to unipolar behavior

Dong‐Hun Kang, Noejung Park, Jaewoong Hyun et al. · Applied Physics Letters · 2005 · 45 citations

Engineering, Adsorption-induced Conversion, Charge Transport +17

Twin SONOS Memory With 30-nm Storage Nodes Under a Merged Gate Fabricated With Inverted Sidewall and Damascene Process

Y.K. Lee, Ki-Woo Song, Jaewoong Hyun et al. · IEEE Electron Device Letters · 2004 · 22 citations

Non-volatile Memory, Electrical Engineering, Engineering +15

Ambient air effects on electrical characteristics of GaP nanowire transistors

Dong‐Hun Kang, Ju-Hue Ko, Eunju Bae et al. · Journal of Applied Physics · 2004 · 20 citations

Gap Nanowire Transistors, Engineering, Nanocomputing +19