Man Chang - Concepedia

Author

Man Chang

Gwangju Institute of Science and Technology

Also Known As

Baofu Ni, Man Chai Chang, Man Chang

Publications

Citations

H-Index

Concepts

All Affiliations

Gwangju Institute of Science and Technology Samsung (South Korea)University of California, Irvine

About

Man Chang is an author at Gwangju Institute of Science and Technology specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	19	33	4K
2	Applied Physics	18	31	3.8K
3	Medicine	1	1	12
4	Natural Sciences	1	1	22
5	Biochemistry	1	1	121

Man Chang

Publications

4.8K

Citations

H-Index

Page 1

	Year	Citations
A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures Myoung‐Jae Lee, Chang Bum Lee, Dongsoo Lee, Nature Materials Materials ScienceNon-volatile MemoryEngineeringNanotechnologyEmerging Memory Technology	2011	2.2K
In situ observation of filamentary conducting channels in an asymmetric Ta2O5−x/TaO2−x bilayer structure Gyeong‐Su Park, Young Bae Kim, Sung Yong Park, Nature Communications EngineeringPhysicsOxide ElectronicsSitu ObservationFilamentary Conducting Channels	2013	345
Physical electro-thermal model of resistive switching in bi-layered resistance-change memory Sungho Kim, Sae‐Jin Kim, Kyung Min Kim, Scientific Reports	2013	241
Pathways of proton release in the bacteriorhodopsin photocycle László Zimányi, György Váró, Man Chang, Biochemistry	1992	209
Water is required for proton transfer from aspartate-96 to the bacteriorhodopsin Schiff base Yi Cao, György Váró, Man Chang, Biochemistry	1991	196
Multi-level switching of triple-layered TaOx RRAM with excellent reliability for storage class memory Seung Ryul Lee, Young‐Bae Kim, Man Chang, Non-volatile MemoryEngineeringMemory DesignMulti-level SwitchingEmerging Memory Technology	2012	160
Bi-layered RRAM with unlimited endurance and extremely uniform switching Young‐Bae Kim, Seung Ryul Lee, Dongsoo Lee, Symposium on VLSI Technology Non-volatile MemoryEngineeringEmerging Memory TechnologyComputer ArchitecturePhase Change Memory	2011	141
Nanoscale RRAM-based synaptic electronics: toward a neuromorphic computing device Sangsu Park, Jinwoo Noh, Myung-lae Choo, Nanotechnology Electronic Synapse DeviceElectrical EngineeringEngineeringNanotechnologyNanoelectronics	2013	136
Reversible resistive switching of SrTiOx thin films for nonvolatile memory applications Dooho Choi, Dongsoo Lee, Hyunjun Sim, Applied Physics Letters Materials ScienceSrtiox FilmNon-volatile MemoryReversible Resistive SwitchingClear Resistance Switching	2006	128
Self‐Limited Switching in Ta<sub>2</sub>O<sub>5</sub>/TaO<i><sub>x</sub></i> Memristors Exhibiting Uniform Multilevel Changes in Resistance Kyung Min Kim, Seung Ryul Lee, Sungho Kim, Advanced Functional Materials Materials ScienceSemiconductorsElectrical EngineeringElectronic DevicesEngineering	2015	125

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