Ji Hyun Hur

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

Myoung‐Jae Lee, Chang Bum Lee, Dongsoo Lee et al. · Nature Materials · 2011 · 2.2K citations

Engineering, Materials Engineering, Materials Science +14

Modeling for bipolar resistive memory switching in transition-metal oxides

Ji Hyun Hur, Myoung‐Jae Lee, Chang Bum Lee et al. · Physical Review B · 2010 · 173 citations

Engineering, Electrical Engineering, Materials Science +17

Multi-level switching of triple-layered TaOx RRAM with excellent reliability for storage class memory

Seung Ryul Lee, Young‐Bae Kim, Man Chang et al. · 2012 · 163 citations

Engineering, Materials Engineering, Materials Science +15

Bi-layered RRAM with unlimited endurance and extremely uniform switching

Young‐Bae Kim, Seung Ryul Lee, Dongsoo Lee et al. · Symposium on VLSI Technology · 2011 · 141 citations

Engineering, Electrical Engineering, Materials Science +15

High performance amorphous oxide thin film transistors with self-aligned top-gate structure

Jae Chul Park, Sang Wook Kim, Sun Il Kim et al. · 2009 · 25 citations

Engineering, Electrical Engineering, Physics +17