Magnetoresistive random-access memory is a non-volatile memory technology that stores data by utilizing the magnetoresistive effect in magnetic tunnel junctions, where the electrical resistance depends on the relative magnetization orientation of adjacent ferromagnetic layers. Research in this domain investigates the fundamental physics, device design, fabrication processes, and materials science required to develop memory arrays exhibiting high speed, low power consumption, high endurance, and scalability, positioning it as a candidate for next-generation universal memory applications.