Concepedia

Author

Yu-Sheng Chen

Industrial Technology Research InstituteORCID

Also Known As

Chen Yusheng, Chen, Yu-Sheng, Yu-Sheng Chen, Yusheng Chen

63

Publications

3.8K

Citations

19

H-Index

89

Concepts

All Affiliations

Industrial Technology Research InstituteNational Tsing Hua UniversityMinghsin University of Science and TechnologyNational Taiwan UniversityPeking University
YC

About

Yu-Sheng Chen is an author at Industrial Technology Research Institute specializing in engineering, electrical engineering, and microelectronics.

Top Concepts

#ConceptH-IndexPublicationsCitations

1

Engineering

17

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3.6K

2

Applied Physics

15

18

3.2K

3

Management

1

1

25

4

Natural Sciences

1

1

11

5

Public Health

1

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25

Yu-Sheng Chen

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29

Publications

3.8K

Citations

19

H-Index

YearCitations

Metal–Oxide RRAM

H.-S. Philip Wong, Heng-Yuan Lee, Shimeng Yu,

Proceedings of the IEEE

2012

2.6K

A 4Mb embedded SLC resistive-RAM macro with 7.2ns read-write random-access time and 160ns MLC-access capability

Shyh-Shyuan Sheu, Meng‐Fan Chang, Ku-Feng Lin,

2011

245

A High-Speed 7.2-ns Read-Write Random Access 4-Mb Embedded Resistive RAM (ReRAM) Macro Using Process-Variation-Tolerant Current-Mode Read Schemes

Meng‐Fan Chang, Shyh-Shyuan Sheu, Ku-Feng Lin,

IEEE Journal of Solid-State Circuits

2013

96

AlOx-Based Resistive Switching Device with Gradual Resistance Modulation for Neuromorphic Device Application

Yi Wu, Shimeng Yu, H.‐S. Philip Wong,

2012

70

Ferroelectricity of HfZrO<sub>2</sub> in Energy Landscape With Surface Potential Gain for Low-Power Steep-Slope Transistors

M. H. Lee, Y.-T. Wei, C. Liu,

IEEE Journal of the Electron Devices Society

2015

66

The Role of Ti Buffer Layer Thickness on the Resistive Switching Properties of Hafnium Oxide-Based Resistive Switching Memories

S. Z. Rahaman, Yu-De Lin, Heng-Yuan Lee,

Langmuir

2017

65

Robust High-Resistance State and Improved Endurance of $\hbox{HfO}_{X}$ Resistive Memory by Suppression of Current Overshoot

Yu-Sheng Chen, Heng-Yuan Lee, Pang-Shiu Chen,

IEEE Electron Device Letters

2011

58

Three-dimensional 4F<sup>2</sup> ReRAM cell with CMOS logic compatible process

Ching-Hua Wang, Yi-Hung Tsai, Kai-Chun Lin,

2010

57

Novel Defects-Trapping ${\rm TaO}_{\rm X}/{\rm HfO}_{\rm X}$ RRAM With Reliable Self-Compliance, High Nonlinearity, and Ultra-Low Current

Yu-Sheng Chen, Heng-Yuan Lee, Pang-Shiu Chen,

IEEE Electron Device Letters

2014

54

Pulse-Width and Temperature Effect on the Switching Behavior of an Etch-Stop-on-MgO-Barrier Spin-Orbit Torque MRAM Cell

S. Z. Rahaman, I‐Jung Wang, Tian-Yue Chen,

IEEE Electron Device Letters

2018

39

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