Yu-Sheng Chen

Metal–Oxide RRAM

H.-S. Philip Wong, Heng-Yuan Lee, Shimeng Yu et al. · Proceedings of the IEEE · 2012 · 2.7K citations

Engineering, Materials Engineering, Materials Science +15

A 4Mb embedded SLC resistive-RAM macro with 7.2ns read-write random-access time and 160ns MLC-access capability

Shyh-Shyuan Sheu, Meng‐Fan Chang, Ku-Feng Lin et al. · 2011 · 247 citations

Engineering, Computer Engineering, Computer Science +16

A High-Speed 7.2-ns Read-Write Random Access 4-Mb Embedded Resistive RAM (ReRAM) Macro Using Process-Variation-Tolerant Current-Mode Read Schemes

Meng‐Fan Chang, Shyh-Shyuan Sheu, Ku-Feng Lin et al. · IEEE Journal of Solid-State Circuits · 2013 · 97 citations

Engineering, Computer Engineering, Electrical Engineering +16

AlOx-Based Resistive Switching Device with Gradual Resistance Modulation for Neuromorphic Device Application

Yi Wu, Shimeng Yu, H.‐S. Philip Wong et al. · 2012 · 70 citations

Engineering, Electrical Engineering, Materials Science +13

The Role of Ti Buffer Layer Thickness on the Resistive Switching Properties of Hafnium Oxide-Based Resistive Switching Memories

S. Z. Rahaman, Yu-De Lin, Heng-Yuan Lee et al. · Langmuir · 2017 · 69 citations

Engineering, Electrical Engineering, Materials Science +15