Yi Wu

Metal–Oxide RRAM

H.-S. Philip Wong, Heng-Yuan Lee, Shimeng Yu et al. · Proceedings of the IEEE · 2012 · 2.7K citations

Engineering, Materials Engineering, Materials Science +15

An Electronic Synapse Device Based on Metal Oxide Resistive Switching Memory for Neuromorphic Computation

Shimeng Yu, Yi Wu, Rakesh Jeyasingh et al. · IEEE Transactions on Electron Devices · 2011 · 806 citations

Engineering, Electrical Engineering, Materials Science +13

Investigating the switching dynamics and multilevel capability of bipolar metal oxide resistive switching memory

Shimeng Yu, Yi Wu, H.‐S. Philip Wong · Applied Physics Letters · 2011 · 287 citations

Engineering, Electrical Engineering, Materials Science +16

A Compact Model for Metal–Oxide Resistive Random Access Memory With Experiment Verification

Zizhen Jiang, Yi Wu, Shimeng Yu et al. · IEEE Transactions on Electron Devices · 2016 · 263 citations

Engineering, Computer Engineering, Electrical Engineering +17

$\hbox{Al}_{2}\hbox{O}_{3}$-Based RRAM Using Atomic Layer Deposition (ALD) With 1-$\mu\hbox{A}$ RESET Current

Yi Wu, Byoungil Lee, H.‐S. Philip Wong · IEEE Electron Device Letters · 2010 · 161 citations

Engineering, Materials Engineering, Materials Science +14