Byoungil Lee

Metal–Oxide RRAM

H.-S. Philip Wong, Heng-Yuan Lee, Shimeng Yu et al. · Proceedings of the IEEE · 2012 · 2.7K citations

Engineering, Materials Engineering, Materials Science +15

Nanoelectronic Programmable Synapses Based on Phase Change Materials for Brain-Inspired Computing

Duygu Kuzum, Rakesh Jeyasingh, Byoungil Lee et al. · Nano Letters · 2011 · 1.3K citations

Life Sciences, Materials Engineering, Materials Science +16

$\hbox{Al}_{2}\hbox{O}_{3}$-Based RRAM Using Atomic Layer Deposition (ALD) With 1-$\mu\hbox{A}$ RESET Current

Yi Wu, Byoungil Lee, H.‐S. Philip Wong · IEEE Electron Device Letters · 2010 · 161 citations

Engineering, Materials Engineering, Materials Science +14

Low-power TiN/Al2O3/Pt resistive switching device with sub-20 μA switching current and gradual resistance modulation

Yi Wu, Shimeng Yu, Byoungil Lee et al. · Journal of Applied Physics · 2011 · 91 citations

Engineering, Electrical Engineering, Materials Science +14

Resistance and Threshold Switching Voltage Drift Behavior in Phase-Change Memory and Their Temperature Dependence at Microsecond Time Scales Studied Using a Micro-Thermal Stage

Sang‐Bum Kim, Byoungil Lee, Mehdi Asheghi et al. · IEEE Transactions on Electron Devices · 2011 · 71 citations

Engineering, Electrical Engineering, Materials Science +14