Publication | Closed Access
Challenges and opportunities for HfO<inf>X</inf> based resistive random access memory
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Citations
4
References
2011
Year
Unknown Venue
Non-volatile MemoryEngineeringEmerging Memory TechnologyComputer ArchitectureHardware SecurityElectronic DevicesMemory DeviceMemory DevicesElectrical EngineeringResistive MemoriesElectronic MemoryComputer EngineeringMagnetoresistive Random-access MemoryComputer ScienceMicroelectronicsMemory ReliabilityMemory ArchitectureResistive SwitchingApplied PhysicsBinary OxideSemiconductor MemoryResistive Random-access Memory
The binary oxide based resistive memories showing superior electrical performances on the resistive switching are reviewed in this paper. The status and challenges of the HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">X</sub> based resistive device with excellent memory properties are presented. Several future challenges for the filamentary type switching device are also addressed.
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