Concepedia

Challenges and opportunities for HfO<inf>X</inf> based resistive random access memory

Y. S. Chen, H. Y. Lee, P. S. Chen, Chen-Han Tsai, P. Y. Gu, Ting Wu, K. H. Tsai, S. S. Sheu, Wei‐Cheng Lin, Che‐Hsin Lin,

2011 · 43 citations · 4 references

DOI

Concepts

EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsMemorySemiconductor MaterialsDevice ReliabilityMemory DevicesMemristive MaterialsFilamentary Switching MechanismsMemory MaterialsMemristive MemoryNonvolatile Memory MaterialsOxide Memristive MaterialsResistive Random-access MemoryResistive SwitchingResistive Switching Materials

Abstract

The binary oxide based resistive memories showing superior electrical performances on the resistive switching are reviewed in this paper. The status and challenges of the HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">X</sub> based resistive device with excellent memory properties are presented. Several future challenges for the filamentary type switching device are also addressed.