Wei‐Cheng Lin

Evidence and solution of over-RESET problem for HfO<inf>X</inf> based resistive memory with sub-ns switching speed and high endurance

H. Y. Lee, Y. S. Chen, P. S. Chen et al. · 2010 · 250 citations

Non-volatile Memory, Engineering, Emerging Memory Technology +17

Highly scalable hafnium oxide memory with improvements of resistive distribution and read disturb immunity

Y. S. Chen, H. Y. Lee, P. S. Chen et al. · 2009 · 200 citations

Non-volatile Memory, Engineering, Emerging Memory Technology +17

An interleaved high step‐up DC‐DC converter with double boost paths

Yie‐Tone Chen, Wei‐Cheng Lin, Ruey‐Hsun Liang · International Journal of Circuit Theory and Applications · 2014 · 44 citations

Electrical Engineering, Engineering, Energy Efficiency +6

Challenges and opportunities for HfO<inf>X</inf> based resistive random access memory

Y. S. Chen, H. Y. Lee, P. S. Chen et al. · 2011 · 43 citations

Non-volatile Memory, Engineering, Emerging Memory Technology +19

Modeling Inductive Behavior of MOSFET Scattering Parameter $S _{22}$ in the Breakdown Regime

Chie‐In Lee, Wei‐Cheng Lin, Yan-Tin Lin · IEEE Transactions on Microwave Theory and Techniques · 2012 · 31 citations

Engineering, Radio Frequency, Unusual Phenomenon +17