Chen-Han Tsai

Evidence and solution of over-RESET problem for HfO<inf>X</inf> based resistive memory with sub-ns switching speed and high endurance

H. Y. Lee, Y. S. Chen, P. S. Chen et al. · 2010 · 252 citations

Engineering, Electrical Engineering, Materials Science +11

Robust High-Resistance State and Improved Endurance of $\hbox{HfO}_{X}$ Resistive Memory by Suppression of Current Overshoot

Yu-Sheng Chen, Heng-Yuan Lee, Pang-Shiu Chen et al. · IEEE Electron Device Letters · 2011 · 58 citations

Engineering, Materials Engineering, Materials Science +16

Novel Defects-Trapping ${\rm TaO}_{\rm X}/{\rm HfO}_{\rm X}$ RRAM With Reliable Self-Compliance, High Nonlinearity, and Ultra-Low Current

Yu-Sheng Chen, Heng-Yuan Lee, Pang-Shiu Chen et al. · IEEE Electron Device Letters · 2014 · 54 citations

Engineering, Electrical Engineering, Materials Science +17

Improved resistive switching properties of Ti/ZrO2/Pt memory devices for RRAM application

Shengyu Wang, Chen-Han Tsai, Dai-Ying Lee et al. · Microelectronic Engineering · 2011 · 44 citations

Natural Sciences, Materials Engineering, Materials Science +11

Challenges and opportunities for HfO<inf>X</inf> based resistive random access memory

Y. S. Chen, H. Y. Lee, P. S. Chen et al. · 2011 · 43 citations

Engineering, Materials Engineering, Materials Science +14