X. Garros

FDSOI devices with thin BOX and ground plane integration for 32nm node and below

C. Fenouillet-Béranger, S. Denorme, P. Perreau et al. · Solid-State Electronics · 2009 · 130 citations

3D Ic Architecture, Electrical Engineering, Engineering +12

Characterization and modeling of hysteresis phenomena in high K dielectrics

C. Leroux, Jérôme Mitard, G. Ghibaud et al. · 2005 · 107 citations

Electrical Engineering, Dielectrics, Engineering +12

Planar Fully depleted SOI technology: A powerful architecture for the 20nm node and beyond

O. Faynot, F. Andrieu, O. Weber et al. · 2010 · 104 citations

Engineering, Vlsi Design, Computer Architecture +18

Low leakage and low variability Ultra-Thin Body and Buried Oxide (UT2B) SOI technology for 20nm low power CMOS and beyond

F. Andrieu, O. Weber, J. Mazurier et al. · 2010 · 103 citations

Engineering, Vlsi Design, Integrated Circuits +16

3D Sequential Integration: Application-driven technological achievements and guidelines

P. Batude, Laurent Brunet, C. Fenouillet-Béranger et al. · 2017 · 73 citations

Contact Pitch, Engineering, 3D Modeling +26