Characterization of effective mobility by split C(V) technique in N-MOSFETs with ultra-thin gate oxides

Effective electron mobility in Si inversion layers in metal–oxide–semiconductor systems with a high-κ insulator: The role of remote phonon scattering

Massimo V. Fischetti, Deborah A. Neumayer, E. Cartier · Journal of Applied Physics · 2001 · 742 citations

Engineering, Materials Science, Physics +17

1.5 nm direct-tunneling gate oxide Si MOSFET's

H. Sasaki, Mizuki Ono, T. Yoshitomi et al. · IEEE Transactions on Electron Devices · 1996 · 346 citations

Engineering, Electrical Engineering, Microelectronics +15

A simple model for quantisation effects in heavily-doped silicon MOSFETs at inversion conditions

M.J. van Dort, P.H. Woerlee, Andrew J. Walker · Solid-State Electronics · 1994 · 273 citations

Engineering, Computer Engineering, Electrical Engineering +17

Investigation of the MOST channel conductance in weak inversion

J.J.M. Koomen · Solid-State Electronics · 1973 · 174 citations · Full text

Natural Sciences, Electrical Engineering, Physics +4

Estimating oxide thickness of tunnel oxides down to 1.4 nm using conventional capacitance-voltage measurements on MOS capacitors

W.K. Henson, Khaled Ahmed, Eric M. Vogel et al. · IEEE Electron Device Letters · 1999 · 162 citations

Engineering, Electrical Engineering, Materials Science +17