Characterization of effective mobility by split C(V) technique in N-MOSFETs with ultra-thin gate oxides - Concepedia

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Characterization of effective mobility by split C(V) technique in N-MOSFETs with ultra-thin gate oxides

DOI Full Paper Access

44

Citations

10

References

2003

Year

F. Lime, C. Guiducci, R. Clerc, G. Ghibaudo, C. Leroux, T. Ernst

Solid-State Electronics

Electrical EngineeringEngineeringNanoelectronicsElectronic EngineeringApplied PhysicsUltra-thin Gate OxidesMicroelectronicsSplit CSemiconductor DeviceEffective Mobility

References

	Year	Citations

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