Applied Physics Letters · 2005 · 83 citations · 10 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsPhotonicsSemiconductor DevicesHigh-frequency Semiconductor DevicesMetal-semiconductor ContactsOptoelectronic DevicesPhotodetectorsPhotonic Integrated CircuitsSemiconductor Device MaterialsGermanium PhotodetectorsHigh-speed PhotodetectionMetal-semiconductor-metal PhotodetectorsPhotodetectionPhotodetector BandwidthPhotodetector MaterialsSilicon PhotodiodesSilicon-on-insulator Technology
We report the fabrication and the characterization of interdigited metal-germanium on silicon metal photodetectors (metal-semiconductor-metal or MSM) for operation at both optical telecommunication wavelengths: 1.31 and 1.55μm. Femtosecond impulse and frequency experiments have been carried out to characterize those MSM Ge photodetectors. For both wavelengths, the measured 3dB bandwidth under 2V bias are close to 10, 18, 20, and 35GHz for electrode spacings equal to 2000, 1000, 700, and 500nm, respectively.
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Strain-induced band gap shrinkage in Ge grown on Si substrate
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High-Speed Germanium-on-SOI Lateral PIN Photodiodes
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